Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
	Peng CS ; Chen H ; Zhao ZY ; Li JH ; Dai DY ; Huang Q ; Zhou JM ; Zhang YH ; Tung CH ; Sheng TT ; Wang J
刊名	journal of crystal growth
	1999
卷号	201 期号:0 页码:530-533
关键词	dislocation stacking faults vacancy strain relaxation silicon germanium SI(100) LAYERS FILMS THREADING DISLOCATION
ISSN号	0022-0248
通讯作者	peng cs,chinese acad sci,inst phys,pob 603,beijing 100080,peoples r china.
中文摘要	we have developed a low-temperature (lt) growth technique. even with ge fraction x upto 90%, the total thickness of fully relaxed gexsi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). the surface roughness is no more than 6 nm. the strain relaxation is quite inhomogeneous from the beginning. stacking faults generate and form the mismatch dislocations in the interface of gesi/lt-si. (c) 1999 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12898]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Peng CS,Chen H,Zhao ZY,et al. Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers[J]. journal of crystal growth,1999,201(0):530-533.
APA	Peng CS.,Chen H.,Zhao ZY.,Li JH.,Dai DY.,...&Wang J.(1999).Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers.journal of crystal growth,201(0),530-533.
MLA	Peng CS,et al."Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers".journal of crystal growth 201.0(1999):530-533.