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CORC

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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:  Wang C
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102
Gu YX (Gu Yong-Xian); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Xu PF (Xu Peng-Fei); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：141/24  |  提交时间：2010/09/07
Nanostructure in the p-layer and its impacts on amorphous silicon solar cells 期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1841-1846
Liao XB (Liao Xianbo); Du WH (Du Wenhui); Yang XS (Yang Xiesen); Povolny H (Povolny Henry); Xiang XB (Xiang Xianbi); Deng XM (Deng Xunming); Sun K (Sun Kai)
收藏  |  浏览/下载：181/0  |  提交时间：2010/04/11
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626
作者:  Zhang SM
收藏  |  浏览/下载：252/65  |  提交时间：2010/08/12
Influence of precipitates on GaN epilayer quality 期刊论文
materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 214-217
Kang JY; Huang QS; Wang ZG
收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12
Influence of precipitates on GaN epilayer quality 会议论文
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Kang JY; Huang QS; Wang ZG
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15
Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition 期刊论文
journal of electronic materials, 2000, 卷号: 29, 期号: 2, 页码: 177-182
作者:  Zhao DG
收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12
Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 192, 期号: 3-4, 页码: 376-380
作者:  Xu B
收藏  |  浏览/下载：35/0  |  提交时间：2010/08/12

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