Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy

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	Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy
	Xu B
刊名	journal of crystal growth
	1998
卷号	192 期号:3-4 页码:376-380
关键词	nanometer island InAs molecular beam epitaxy atomic force microscopy quantum dot GAAS LASERS GROWTH ASSEMBLED QUANTUM DOTS
ISSN号	0022-0248
通讯作者	gong q,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	atomic force microscopy (afm) measurements of nanometer-sized islands formed by 2 monolayers of inas by molecular beam epitaxy have been carried out and the scan line of individual islands was extracted from raw afm data for investigation. it is found that the base widths of nanometer-sized islands obtained by afm are not reliable due to the finite size and shape of the contacting probe. a simple model is proposed to analyze the deviation of the measured value from the real value of the base width of inas islands. (c) 1998 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13108]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy[J]. journal of crystal growth,1998,192(3-4):376-380.
APA	Xu B.(1998).Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy.journal of crystal growth,192(3-4),376-380.
MLA	Xu B."Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy".journal of crystal growth 192.3-4(1998):376-380.