Influence of precipitates on GaN epilayer quality

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	Influence of precipitates on GaN epilayer quality
	Kang JY ; Huang QS ; Wang ZG
	2000
会议名称	iumrs international conference of advanced materials
会议日期	jun 13-18, 1999
会议地点	beijing, peoples r china
关键词	precipitate GaN WDS TEM cathodoluminescence VAPOR-PHASE EPITAXY FILMS MECHANISM GROWTH
页码	214-217
通讯作者	kang jy xiamen univ dept phys xiamen 361005 peoples r china.
中文摘要	gan epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive x-ray spectroscopy and energy dispersive s-ray spectroscopy. precipitates were observed to mainly consist of o impurity whose strengths were weaker than surrounding matrix. the precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. the larger precipitates often joined to cracks in the tem specimens. the crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. yellow luminescence of the epilayers was imaged by cathodoluminescence. the distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (c) 2000 elsevier science s.a, all rights reserved.
英文摘要	gan epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive x-ray spectroscopy and energy dispersive s-ray spectroscopy. precipitates were observed to mainly consist of o impurity whose strengths were weaker than surrounding matrix. the precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. the larger precipitates often joined to cracks in the tem specimens. the crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. yellow luminescence of the epilayers was imaged by cathodoluminescence. the distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (c) 2000 elsevier science s.a, all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:26导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:26z (gmt). no. of bitstreams: 1 2961.pdf: 714385 bytes, checksum: 2ac0b338dc19854791bdd69b7d6d9e5d (md5) previous issue date: 2000; iumrs.; amer xtal technol.; sut associates.; univ calif san diego.; shanghai inst met.; xiamen univ, dept phys, xiamen 361005, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	iumrs.; amer xtal technol.; sut associates.; univ calif san diego.; shanghai inst met.
会议录	materials science and engineering b-solid state materials for advanced technology, 75 (2-3)
会议录出版者	elsevier science sa ; po box 564, 1001 lausanne, switzerland
会议录出版地	po box 564, 1001 lausanne, switzerland
学科主题	半导体材料
语种	英语
ISSN号	0921-5107
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15001]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kang JY,Huang QS,Wang ZG. Influence of precipitates on GaN epilayer quality[C]. 见:iumrs international conference of advanced materials. beijing, peoples r china. jun 13-18, 1999.