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科研机构
半导体研究所 [16]
内容类型
期刊论文 [10]
会议论文 [6]
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2011 [1]
2004 [2]
2003 [1]
2002 [4]
2001 [3]
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半导体材料 [16]
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Enhanced absorption in nanocrystalline silicon thin film solar cells using surface plasmon polaritons
期刊论文
icmree2011 - proceedings 2011 international conference on materials for renewable energy and environment, 2011, 卷号: 1, 页码: 242-246
Hao, Huiying
;
Li, Weimin
;
Xing, Jie
;
Fan, Zhenjun,
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/06/14
Absorption
Electromagnetic wave polarization
Energy gap
Gold
Light absorption
Nanostructured materials
Optical properties
Particle optics
Phonons
Photons
Plasmons
Quantum theory
Scattering
Semiconducting silicon compounds
Silicon solar cells
Silver
Solar absorbers
Solar energy
Surface plasmon resonance
Surfaces
Thin films
Improved diphasic nc-si/a-si : H I-layer materials using PECVD
会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Hao, HY
;
Zhang, SB
;
Xu, YY
;
Zeng, XB
;
Diao, HW
;
Kong, GL
;
Liao, XB
收藏
  |  
浏览/下载:215/78
  |  
提交时间:2010/03/29
OPEN-CIRCUIT VOLTAGE
SILICON SOLAR-CELLS
AMORPHOUS-SILICON
ABSORPTION
The diphasic nc-Si/a-Si : H thin film with improved medium-range order
会议论文
20th international conference on amorphous and microcrystalline semiconductors, campos do jordao, brazil, aug 25-29, 2003
Zhang S
;
Liao X
;
Xu Y
;
Martins R
;
Fortunato E
;
Kong G
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
AMORPHOUS-SILICON FILMS
SCATTERING
ABSORPTION
DENSITIES
HYDROGEN
Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline
会议论文
symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002
Zhang SB
;
Liao XB
;
Xu YY
;
Hu ZH
;
Zeng XB
;
Diao HW
;
Luo MC
;
Kong G
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  |  
浏览/下载:18/0
  |  
提交时间:2010/10/29
POLYMORPHOUS SILICON
LIGHT-SCATTERING
THIN-FILMS
SI
MICROCRYSTALLINITY
ABSORPTION
STATES
Characterization of diphasic nc-Si/a-Si : H thin films and solar cells
会议论文
29th ieee photovoltaic specialists conference, new orleans, la, may 19-24, 2002
Zhang SB
;
Xu YY
;
Hu ZH
;
Wang YQ
;
Zeng XB
;
Diao HW
;
Wang WJ
;
Kong GL
;
Liao XB
收藏
  |  
浏览/下载:23/7
  |  
提交时间:2010/10/29
SILICON
RAMAN
Progress of Si-based nanocrystalline luminescent materials
期刊论文
chinese science bulletin, 2002, 卷号: 47, 期号: 15, 页码: 1233-1242
Peng YC
;
Zhao XW
;
Fu GS
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  |  
浏览/下载:85/0
  |  
提交时间:2010/08/12
Si-based nanomaterials
fabricated method
structural characterization
light emitting mechanism
Si-based photoelectronic devices
CHEMICAL-VAPOR-DEPOSITION
SELF-ASSEMBLING FORMATION
SILICON QUANTUM DOTS
LASER-ABLATION
OPTICAL-ABSORPTION
POROUS SILICON
LIGHT-EMISSION
PHOTOLUMINESCENCE
FABRICATION
OXYGEN
A novel application to quantum dot materials to the active region of superluminescent diodes
期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 25-29
作者:
Li CM
;
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/08/12
atomic force microscopy
low dimensional structures
quantum dots
strain
molecular beam epitaxy
superluminescent diodes
1.3 MU-M
HIGH-POWER
INTEGRATED ABSORBER
INAS ISLANDS
SPECTRUM
WINDOW
LAYER
SIZE
Influence of strain on annealing effects of In(Ga)As quantum dots
期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者:
Xu B
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
low dimensional structures
strain
molecular beam epitaxy
quantum dots
ELECTRONIC-STRUCTURE
PHOTOLUMINESCENCE
INTERDIFFUSION
TRANSITIONS
SPECTRA
Indium doping effect on GaN in the initial growth stage
期刊论文
journal of electronic materials, 2001, 卷号: 30, 期号: 8, 页码: 977-979
作者:
Han PD
收藏
  |  
浏览/下载:155/29
  |  
提交时间:2010/08/12
GaN
indium doping
initial growth stage
morphology
optical transmission
photoluminescence
VAPOR-PHASE EPITAXY
BUFFER LAYER
FILMS
SAPPHIRE
DEPOSITION
Hydrogen behavior in GaN epilayers grown by NH3-MBE
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:99/8
  |  
提交时间:2010/08/12
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
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