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Enhanced absorption in nanocrystalline silicon thin film solar cells using surface plasmon polaritons 期刊论文
icmree2011 - proceedings 2011 international conference on materials for renewable energy and environment, 2011, 卷号: 1, 页码: 242-246
Hao, Huiying; Li, Weimin; Xing, Jie; Fan, Zhenjun,
收藏  |  浏览/下载:12/0  |  提交时间:2012/06/14
Improved diphasic nc-si/a-si : H I-layer materials using PECVD 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Hao, HY; Zhang, SB; Xu, YY; Zeng, XB; Diao, HW; Kong, GL; Liao, XB
收藏  |  浏览/下载:215/78  |  提交时间:2010/03/29
The diphasic nc-Si/a-Si : H thin film with improved medium-range order 会议论文
20th international conference on amorphous and microcrystalline semiconductors, campos do jordao, brazil, aug 25-29, 2003
Zhang S; Liao X; Xu Y; Martins R; Fortunato E; Kong G
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline 会议论文
symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002
Zhang SB; Liao XB; Xu YY; Hu ZH; Zeng XB; Diao HW; Luo MC; Kong G
收藏  |  浏览/下载:18/0  |  提交时间:2010/10/29
Characterization of diphasic nc-Si/a-Si : H thin films and solar cells 会议论文
29th ieee photovoltaic specialists conference, new orleans, la, may 19-24, 2002
Zhang SB; Xu YY; Hu ZH; Wang YQ; Zeng XB; Diao HW; Wang WJ; Kong GL; Liao XB
收藏  |  浏览/下载:23/7  |  提交时间:2010/10/29
SILICON  RAMAN  
Progress of Si-based nanocrystalline luminescent materials 期刊论文
chinese science bulletin, 2002, 卷号: 47, 期号: 15, 页码: 1233-1242
Peng YC; Zhao XW; Fu GS
收藏  |  浏览/下载:85/0  |  提交时间:2010/08/12
A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 25-29
作者:  Li CM;  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载:30/0  |  提交时间:2010/08/12
Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者:  Xu B
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
Indium doping effect on GaN in the initial growth stage 期刊论文
journal of electronic materials, 2001, 卷号: 30, 期号: 8, 页码: 977-979
作者:  Han PD
收藏  |  浏览/下载:155/29  |  提交时间:2010/08/12
Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载:99/8  |  提交时间:2010/08/12


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