Indium doping effect on GaN in the initial growth stage

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	Indium doping effect on GaN in the initial growth stage
	Han PD
刊名	journal of electronic materials
	2001
卷号	30 期号:8 页码:977-979
关键词	GaN indium doping initial growth stage morphology optical transmission photoluminescence VAPOR-PHASE EPITAXY BUFFER LAYER FILMS SAPPHIRE DEPOSITION
ISSN号	0361-5235
通讯作者	yuan hr,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	three minutes' growth was carried out to investigate the indium-doping effect on initially grown gan. indium-doped and undoped samples were grown by low-pressure metalorganic vapor phase epitaxy. atomic force microscope observation revealed that in-doping modified the morphology of the nuclei. indium-doping also enhanced wetting between the buffer and nuclei layers, which was also supported by optical transmission. photoluminescence suggested that indium-doping obviously enhanced band-edge related emission even in the nucleation stage. x-ray diffraction performed on samples grown for 20 minutes indicated improvement of the crystalline quality through indium-doping. the mechanism of the indium-doping effect was discussed.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12120]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han PD. Indium doping effect on GaN in the initial growth stage[J]. journal of electronic materials,2001,30(8):977-979.
APA	Han PD.(2001).Indium doping effect on GaN in the initial growth stage.journal of electronic materials,30(8),977-979.
MLA	Han PD."Indium doping effect on GaN in the initial growth stage".journal of electronic materials 30.8(2001):977-979.