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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文 physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299 Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD 收藏  |  浏览/下载：68/3  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  TEMPERATURE ALN INTERLAYERS  PHASE EPITAXY  OPTICAL-PROPERTIES  SURFACTANT  SUBSTRATE  STRESS  SI  REDUCTION  SAPPHIRE   High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29 BUFFER LAYER  STRESS  PHOTODIODES  REDUCTION  DETECTORS  SAPPHIRE  EPITAXY  GROWTH   Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS   Influence of precipitates on GaN epilayer quality 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 214-217 Kang JY; Huang QS; Wang ZG 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 precipitate  GaN  WDS  TEM  cathodoluminescence  VAPOR-PHASE EPITAXY  FILMS  MECHANISM  GROWTH   Influence of precipitates on GaN epilayer quality 会议论文 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Kang JY; Huang QS; Wang ZG 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 precipitate  GaN  WDS  TEM  cathodoluminescence  VAPOR-PHASE EPITAXY  FILMS  MECHANISM  GROWTH