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科研机构
半导体研究所 [68]
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期刊论文 [63]
会议论文 [5]
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2017 [1]
2014 [1]
2013 [1]
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2010 [4]
2009 [6]
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半导体材料 [68]
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N-type GaSb single crystals with high below-band gap transmission
期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107801
作者:
Yong-Biao Bai
;
You-Wen Zhao
;
Gui-Ying Shen
;
Xiao-Yu Chen
;
Jing-Ming Liu
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2018/05/23
Strain-assisted structural transformation and band gap tuning in BeO, MgTe, CdS and 2H-SiC: A hybrid density functional study
期刊论文
epl, 2014, 卷号: 106, 期号: 5, 页码: 57001
Shi, LW
;
Qin, Y
;
Hu, J
;
Duan, YF
;
Qu, LC
;
Wu, L
;
Tang, G
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  |  
浏览/下载:25/0
  |  
提交时间:2015/04/02
Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures
期刊论文
materials letters, 2013, 卷号: 107, 页码: 50–52
Ke-Fan Wang, Shengchun Qu, Dewei Liu, Kong Liu, Jian Wang, Li Zhao, Hongliang Zhu, Zhanguo Wang
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  |  
浏览/下载:13/0
  |  
提交时间:2014/03/18
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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  |  
浏览/下载:69/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Spin splitting modulated by uniaxial stress in InAs nanowires
期刊论文
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801
Liu GH (Liu Genhua)
;
Chen YH (Chen Yonghai)
;
Jia CH (Jia Caihong)
;
Hao GD (Hao Guo-Dong)
;
Wang ZG (Wang Zhanguo)
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  |  
浏览/下载:17/0
  |  
提交时间:2010/12/28
NARROW-GAP SEMICONDUCTOR
INVERSION-ASYMMETRY
QUANTUM DOTS
BAND
STATES
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
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  |  
浏览/下载:118/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103
作者:
Wei HY
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  |  
浏览/下载:59/8
  |  
提交时间:2011/07/05
SENSITIZED SOLAR-CELLS
PHOTOCATALYZED TRANSFORMATION
CHLOROAROMATIC DERIVATIVES
ZINC-OXIDE
FILMS
POWDER
PHENOL
Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells
期刊论文
cailiao gongcheng/journal of materials engineering, 2011, 期号: 8, 页码: 5-7+13
Liu, Shi-Yong
;
Zeng, Xiang-Bo
;
Peng, Wen-Bo
;
Yao, Wen-Jie
;
Xie, Xiao-Bing
;
Yang, Ping
;
Wang, Chao
;
Wang, Zhan-Guo
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  |  
浏览/下载:32/0
  |  
提交时间:2012/06/14
Amorphous films
Chemical vapor deposition
Energy gap
High resolution electron microscopy
High resolution transmission electron microscopy
Hydrogen
Nanocrystalline silicon
Optical band gaps
Plasma deposition
Plasma enhanced chemical vapor deposition
Raman spectroscopy
Semiconducting silicon compounds
Solar power generation
Thin films
Transmission electron microscopy
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/02/06
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Comparison of as-grown and annealed GaN/InGaN:Mg samples
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW
;
Wang XL
;
Xiao HL
;
Wang CM
;
Yin HB
;
Chen H
;
Lin DF
;
Jiang LJ
;
Feng C
;
Li JM
;
Wang ZG
;
Hou X
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  |  
浏览/下载:18/0
  |  
提交时间:2012/01/06
LIGHT-EMITTING-DIODES
VAPOR-PHASE EPITAXY
BAND-GAP
MG
PHOTOLUMINESCENCE
INGAN
DEPENDENCE
STRAIN
ENERGY
INN
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