CORC

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CORC

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Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method 期刊论文
materials letters, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033
Sun LL (Sun Lili); Liu C (Liu Chao); Li JM (Li Jianming); Wang JX (Wang Junxi); Yan FW (Yan Fawang); Zeng YP (Zeng Yiping); Li JM (Li Jinmin)
收藏  |  浏览/下载：226/60  |  提交时间：2010/05/07
Influence of implantation energy on the characteristics of Mn-implanted nonpolar a-plane GaN films 期刊论文
materials letters, 2009, 卷号: 63, 期号: 3-4, 页码: 451-453
Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载：255/68  |  提交时间：2010/03/08
The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503
Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载：55/1  |  提交时间：2010/03/08
Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 25-28
作者:  Liu Shiyong;  Peng Wenbo
收藏  |  浏览/下载：13/0  |  提交时间：2010/11/23
The impact of implantation dose on the characteristics of diluted-magnetic nonpolar GaN:Cu films 期刊论文
materials letters, 2009, 卷号: 63, 期号: 29, 页码: 2574-2576
Sun, LL (Sun, Lili); Yan, FW (Yan, Fawang); Zhang, HX (Zhang, Huixiao); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)
收藏  |  浏览/下载：170/32  |  提交时间：2010/03/08
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713
Luo WJ; Wang XL; Guo LC; Mao HL; Wang CM; Ran JX; Li JP; Li JM
收藏  |  浏览/下载：191/53  |  提交时间：2010/03/08
GaN  Si(111)  Crack  AlN  MOCVD  
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793
Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29
2DEG  
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文
microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Wang XY (Wang, Xiaoyan); Wang XL (Wang, Xiaoliang); Hu GX (Hu, Guoxin); Wang BZ (Wang, Baozhu); Ma ZY (Ma, Zhiyong); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Ran JX (Ran, Junxue); Li JP (Li, Jianping)
收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29
Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE 期刊论文
physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409
Wang XY (Wang Xiaoyan); Wang XL (Wang Xiaoliang); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li AN (Li Antnin)
收藏  |  浏览/下载：46/0  |  提交时间：2010/03/29

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