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科研机构
半导体研究所 [28]
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期刊论文 [26]
会议论文 [2]
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2010 [2]
2008 [2]
2007 [1]
2006 [1]
2004 [2]
2003 [5]
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半导体材料 [28]
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Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO
期刊论文
acs applied materials & interfaces, 2010, 卷号: 2, 期号: 6, 页码: 1780-1784
Dong JJ (Dong J. J.)
;
Zhang XW (Zhang X. W.)
;
You JB (You J. B.)
;
Cai PF (Cai P. F.)
;
Yin ZG (Yin Z. G.)
;
An Q (An Q.)
;
Ma XB (Ma X. B.)
;
Jin P (Jin P.)
;
Wang ZG (Wang Z. G.)
;
Chu PK (Chu Paul K.)
收藏
  |  
浏览/下载:151/22
  |  
提交时间:2010/07/05
hydrogen plasma treatment
zinc oxide
Raman spectroscopy
photoluminescence
RAMAN-SCATTERING
IMPLANTED ZNO
THIN-FILMS
DENSITY
Magnetic Properties of FePt Nanoparticles Prepared by a Micellar Method
期刊论文
nanoscale research letters, 2010, 卷号: 5, 期号: 1, 页码: 1-6
作者:
You JB
;
Zhang XW
;
Yin ZG
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  |  
浏览/下载:203/39
  |  
提交时间:2010/04/04
FePt nanoparticles
Reverse micelles
Self-assembly
Interparticle exchange coupling
Magnetic recording
FILMS
ANISOTROPY
FUTURE
LIMITS
MEDIA
The growth temperatures dependence of optical and electrical properties of InN films
期刊论文
science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242
Liu, B
;
Zhang, R
;
Xie, ZL
;
Xiu, XQ
;
Li, L
;
Kong, JY
;
Yu, HQ
;
Han, P
;
Gu, SL
;
Shi, Y
;
Zheng, YD
;
Tang, CG
;
Chen, YH
;
Wang, ZG
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  |  
浏览/下载:48/2
  |  
提交时间:2010/03/08
metalorganic chemical vapor deposition
X-ray diffraction
photoluminescence
Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures
期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472
作者:
Yang T
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  |  
浏览/下载:252/54
  |  
提交时间:2010/03/08
Metalorganic chemical vapor deposition
Quantum dots
InAs
GaAs
Laser diodes
Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy
期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 7, 页码: 2108-2111
Fan HB (Fan Hai-Bo)
;
Yang SY (Yang Shao-Yan)
;
Zhang PF (Zhang Pan-Feng)
;
Wei HY (Wei Hong-Yuan)
;
Liu XL (Liu Xiang-Lin)
;
Jiao CM (Jiao Chun-Mei)
;
Zhu QS (Zhu Qin-Sheng)
;
Chen YH (Chen Yong-Hai)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:83/0
  |  
提交时间:2010/03/29
THIN-FILMS
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
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  |  
浏览/下载:20/0
  |  
提交时间:2010/04/11
characterization
point defects
molecular beam epitaxy
semiconducting gallium compounds
semiconducting indium compounds
semiconducting ternary compounds
1.55 MU-M
QUANTUM-WELLS
TEMPERATURE
GAAS
Formation of ferromagnetic clusters in GaAs matrix and GaAs/AlGaAs superlattice through Mn ion implantation at two different temperatures
期刊论文
journal of crystal growth, 2004, 卷号: 268, 期号: 1-2, 页码: 12-17
Wang CH
;
Chen YH
;
Yu G
;
Wang ZG
收藏
  |  
浏览/下载:263/86
  |  
提交时间:2010/03/09
nanomaterials
Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells
期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 3, 页码: 548-551
Bian LF
;
Jiang D
;
Liang XG
;
Lu SL
收藏
  |  
浏览/下载:41/18
  |  
提交时间:2010/03/09
MOLECULAR-BEAM EPITAXY
Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er
期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 10-15
Chen CY
;
Chen WD
;
Song SF
;
Hsu CC
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  |  
浏览/下载:441/2
  |  
提交时间:2010/08/12
low dimensional structures
chemical vapor deposition processes
nanomaterials
semiconducting materials
SILICON NANOCRYSTALS
LUMINESCENCE
EXCITATION
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate
期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者:
Zhang SM
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  |  
浏览/下载:230/30
  |  
提交时间:2010/08/12
in situ laser reflectometry
lateral overgrowth
metalorganic chemical vapor deposition
GaN
CHEMICAL-VAPOR-DEPOSITION
HIGH-QUALITY GAN
BUFFER LAYER
THREADING DISLOCATIONS
TEMPERATURE
EVOLUTION
SURFACE
MOVPE
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