CORC

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CORC

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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512
Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H
收藏  |  浏览/下载：64/6  |  提交时间：2011/07/05
Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 3, 页码: 562-566
Liu P; He Y; Zhou JP; Mu CH; Zhang HW
收藏  |  浏览/下载：156/21  |  提交时间：2010/03/08
Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文
chinese physics b, 2009, 卷号: 18, 期号: 9, 页码: 3980-3984
Zhao JZ; Lin ZJ; Corrigan TD; Zhang Y; Lu YJ; Lu W; Wang ZG; Chen H
收藏  |  浏览/下载：95/25  |  提交时间：2010/03/08
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin)
收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29
Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 17, 页码: art.no.173507
Zhao J (Zhao, Jianzhi); Lin Z (Lin, Zhaojun); Corrigan TD (Corrigan, Timothy D.); Wang Z (Wang, Zhen); You Z (You, Zhidong); Wang Z (Wang, Zhanguo)
收藏  |  浏览/下载：60/0  |  提交时间：2010/03/29
A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 786-789
作者:  Jin P
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 6, 页码: 959-962
作者:  Zhang Yang
收藏  |  浏览/下载：16/0  |  提交时间：2010/11/23
Electrical properties and electroluminescence of 4H-SiC p-n junction diodes 期刊论文
journal of rare earths, 2004, 卷号: 22 sp.iss.si, 期号: 0, 页码: 275-278
Sun, GS; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM
收藏  |  浏览/下载：87/0  |  提交时间：2010/03/17
4H-SiC  
Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells 期刊论文
semiconductor science and technology, 2001, 卷号: 16, 期号: 10, 页码: 822-825
作者:  Tan PH
收藏  |  浏览/下载：73/4  |  提交时间：2010/08/12
Asymmetric dark current in double barrier quantum well infrared photodetectors 会议论文
conference on infrared spaceborne remote sensing vi, san diego, ca, jul 22-24, 1998
Zhuang QD; Li JM; Lin LY
收藏  |  浏览/下载：21/0  |  提交时间：2010/10/29

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