A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure

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	A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure
	Jin P
刊名	semiconductor science and technology
	2006
卷号	21 期号:6 页码:786-789
关键词	DELTA-DOPED GAAS FRANZ-KELDYSH OSCILLATIONS BUILT-IN FIELD FERMI-LEVEL PHOTOREFLECTANCE SURFACE SPECTROSCOPY
ISSN号	0268-1242
通讯作者	jin, p, nankai univ, dept phys, tianjin 300071, peoples r china. e-mail: pengjin@red.semi.ac.cn
中文摘要	complex fourier transformation (cft) has been employed to analyse contactless electroreflectance (cer) spectra from an undoped-n(+) gaas structure with various ac modulations and dc bias voltages. the cft spectra of cer have been compared with those of photoreflectance (pr). it has been found that the cer non-flat modulation is between the built-in electric field and a larger electric field which increases with the modulation voltage. the result has been explained by the screening of the applied modulation electric field in one of the two half modulation cycles and the trapping of electrons in surface states in the other half modulation cycle. the dc bias does not change the cer spectra, hence their cft spectra. this is because of the screening of the applied dc bias electric field.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10576]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P. A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure[J]. semiconductor science and technology,2006,21(6):786-789.
APA	Jin P.(2006).A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure.semiconductor science and technology,21(6),786-789.
MLA	Jin P."A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure".semiconductor science and technology 21.6(2006):786-789.