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	Asymmetric dark current in double barrier quantum well infrared photodetectors
	Zhuang QD ; Li JM ; Lin LY
	1998
会议名称	conference on infrared spaceborne remote sensing vi
会议日期	jul 22-24, 1998
会议地点	san diego, ca
关键词	dark current quantum well infrared photodetector MU-M PERFORMANCE DETECTORS ARRAY
页码	391-395
通讯作者	zhuang qd chinese acad sci inst semicond ctr semicond mat pob 912 beijing 100083 peoples r china.
中文摘要	asymmetric dark current and photocurrent versus voltage characteristic in the double barrier quantum wells (dbqws) photovoltaic infrared photodetector has been studied. a model based on asymmetric potential barriers was proposed. the asymmetric potential thick barrier, which due to the si dopant segregation during growth makes a major contribution to the asymmetrical i-v characteristic, calculations based on our model agree well with experimental results. this work also confirms the potential use of this dbqws for infrared photodetector with large responsivity and little dark current under negative bias.
英文摘要	asymmetric dark current and photocurrent versus voltage characteristic in the double barrier quantum wells (dbqws) photovoltaic infrared photodetector has been studied. a model based on asymmetric potential barriers was proposed. the asymmetric potential thick barrier, which due to the si dopant segregation during growth makes a major contribution to the asymmetrical i-v characteristic, calculations based on our model agree well with experimental results. this work also confirms the potential use of this dbqws for infrared photodetector with large responsivity and little dark current under negative bias.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:05z (gmt). no. of bitstreams: 1 2972.pdf: 319459 bytes, checksum: c60ba3a4e56b8940b7a2b83a51774ab9 (md5) previous issue date: 1998; spie int soc opt engn.; chinese acad sci, inst semicond, ctr semicond mat, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie int soc opt engn.
会议录	infrared spaceborne remote sensing vi, 3437
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	半导体材料
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-2892-2
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13789]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhuang QD,Li JM,Lin LY. Asymmetric dark current in double barrier quantum well infrared photodetectors[C]. 见:conference on infrared spaceborne remote sensing vi. san diego, ca. jul 22-24, 1998.

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