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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：58/2  |  提交时间：2011/07/05
Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films 期刊论文
thin solid films, 2009, 卷号: 517, 期号: 6, 页码: 1989-1994
作者:  Li Y
收藏  |  浏览/下载：360/38  |  提交时间：2010/03/08
Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms 期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 5, 页码: 1120-1134
Yang, JL; Gaspar, J; Paul, O
收藏  |  浏览/下载：27/0  |  提交时间：2010/03/08
Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane 期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 2, 页码: 453-461
Zhou, W; Yang, JL; Sun, GS; Liu, XF; Yang, FH; Li, JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/03/08
Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319
Zhou WM; Wang CY; Chen YH; Wang ZG
收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载：55/0  |  提交时间：2010/04/11
Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling 期刊论文
applied physics letters, 2004, 卷号: 85, 期号: 23, 页码: 5562-5564
Lu, Y; Cong, GW; Liu, XL; Lu, DC; Wang, ZG; Wu, MF
收藏  |  浏览/下载：21/0  |  提交时间：2010/03/17
STRESS  
Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method 期刊论文
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 19-25
Qu BZ; Chen Z; Lu DC; Han P; Liu XG; Wang XH; Wang D; Zhu QS; Wang ZG
收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者:  Zhao DG
收藏  |  浏览/下载：299/12  |  提交时间：2010/08/12

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