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Double Dirac point in a photonic graphene 期刊论文
Journal of Physics D: Applied Physics, 2017, 卷号: 50, 页码: 335101
作者:  Pingping Qiu;  Weibin Qiu;  Zhili Lin;  Houbo Chen;  Junbo Ren
收藏  |  浏览/下载：41/0  |  提交时间：2018/06/01
Investigation of beam splitter in a zero-refractive-index photonic crystal at the frequency of Diraclike point 期刊论文
SCIENTIFIC REPORTS, 2017, 卷号: 7, 页码: 9588
作者:  Pingping Qiu;  Weibin Qiu;  Zhili Lin;  Houbo Chen;  Junbo Ren
收藏  |  浏览/下载：23/0  |  提交时间：2018/05/31
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.44201
作者:  Cao YL;  Yang T
收藏  |  浏览/下载：18/0  |  提交时间：2011/07/05
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：49/4  |  提交时间：2011/07/05
Microwave Study of FeSe(0.3)Te(0.7) Thin Film by TE(011)-Mode Sapphire Dielectric Resonator 期刊论文
ieee transactions on applied superconductivity, 2011, 卷号: 21, 期号: 3, 页码: 599-601
Wu, Y; Zhou, SY; Wang, XY; Cao, LX; Zhang, XQ; Luo, S; He, YS; Barannik, AA; Cherpak, NT; Skresanov, VN
收藏  |  浏览/下载：17/0  |  提交时间：2012/02/06
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载：26/0  |  提交时间：2012/01/06
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05

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