CORC

在结果中检索

CORC

浏览/检索结果: 共8条，第1-8条 帮助

限定条件        
已选(0)清除 条数/页：   排序方式：
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载：26/0  |  提交时间：2012/01/06
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载：66/3  |  提交时间：2010/03/08
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载：55/0  |  提交时间：2010/04/11
The growth morphologies of GaN layer on Si(111) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98
Lu YA; Liu XL; Lu DC; Yuan HR; Hu GQ; Wang XH; Wang ZG; Duan XF
收藏  |  浏览/下载：21/0  |  提交时间：2010/08/12
Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载：99/8  |  提交时间：2010/08/12
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 429-432
Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：31/0  |  提交时间：2010/08/12
PROTON-IMPLANTED NEW TYPE SILICON MATERIAL SUBJECTED TO 2-STEP FURNACE ANNEALING 期刊论文
nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1991, 卷号: 59, 期号: 0, 页码: 1053-1055
LI JM
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15

©版权所有 ©2017 CSpace - Powered by CSpace