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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 会议论文 4th international conference on silicon epitaxy and heterostructures, awaji isl, japan, may 23-26, 2005 Yu, J; Kasper, E; Oehme, M 收藏  |  浏览/下载：146/20  |  提交时间：2010/03/29 SiGe   Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Jin P;  Xu B 收藏  |  浏览/下载：127/16  |  提交时间：2010/03/29 QUANTUM DOTS   Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate 会议论文 symposium on advance characterization of electronic materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Wu J; Zeng YP; Cui LJ; Zhu ZP; Wang BX; Wang ZG 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 INP(001)  EPITAXY  GAAS