Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate

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	Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate
	Wu J ; Zeng YP ; Cui LJ ; Zhu ZP ; Wang BX ; Wang ZG
	2002
会议名称	symposium on advance characterization of electronic materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002)
会议日期	jun 10-14, 2002
会议地点	xian, peoples r china
关键词	INP(001) EPITAXY GAAS
页码	4423-4426
通讯作者	wu j chinese acad sci inst semicond lab semicond mat sci beijing 100083 peoples r china.
中文摘要	diagonal self-assembled inas quantum wire (qwr) arrays with the stacked inas/in0.52al0.48as structure are grown on inp substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. both the molecular beam epitaxy (mbe) and migration enhanced epitaxy (mee) techniques are employed. transmission electron microscopy reveals that whether a diagonal inas qwr array of the stacked inas/inalas is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. asymmetry in the diagonal mee-grown inas qwr array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the inas quantum wires.
英文摘要	diagonal self-assembled inas quantum wire (qwr) arrays with the stacked inas/in0.52al0.48as structure are grown on inp substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. both the molecular beam epitaxy (mbe) and migration enhanced epitaxy (mee) techniques are employed. transmission electron microscopy reveals that whether a diagonal inas qwr array of the stacked inas/inalas is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. asymmetry in the diagonal mee-grown inas qwr array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the inas quantum wires.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:09导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:09z (gmt). no. of bitstreams: 1 2834.pdf: 1237251 bytes, checksum: 3612f52bb5412cafcc46f262f83f0733 (md5) previous issue date: 2002; chinese mat res soc.; minist sci & technol china.; natl nat sci fdn china.; chinese acad sci.; chinese acad engn.; gove shaanxi province & xian city.; china electr mat assoc.; china assoc sci & technol.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; chinese acad sci, inst semicond, ctr semicond mat, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	chinese mat res soc.; minist sci & technol china.; natl nat sci fdn china.; chinese acad sci.; chinese acad engn.; gove shaanxi province & xian city.; china electr mat assoc.; china assoc sci & technol.
会议录	international journal of modern physics b, 16 (28-29)
会议录出版者	world scientific publ co pte ltd ; journal dept po box 128 farrer road, singapore 912805, singapore
会议录出版地	journal dept po box 128 farrer road, singapore 912805, singapore
学科主题	半导体材料
语种	英语
ISSN号	0217-9792
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14879]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wu J,Zeng YP,Cui LJ,et al. Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate[C]. 见:symposium on advance characterization of electronic materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002). xian, peoples r china. jun 10-14, 2002.