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科研机构
半导体研究所 [14]
内容类型
会议论文 [14]
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2006 [1]
2004 [2]
2003 [1]
2002 [1]
2000 [2]
1999 [3]
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学科主题
半导体材料 [14]
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学科主题:半导体材料
内容类型:会议论文
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Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
收藏
  |  
浏览/下载:61/12
  |  
提交时间:2010/03/29
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
FE-DOPED INP
POINT-DEFECTS
COMPENSATION
TEMPERATURE
DONORS
TRAPS
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
收藏
  |  
浏览/下载:177/52
  |  
提交时间:2010/03/29
DEEP-LEVEL DEFECTS
FE-DOPED INP
GROWN INP
SPECTROSCOPY
RESONANCE
WAFER
A V-shaped module technique for promoting generation photocurrent density of silicon solar cells
会议论文
5th international conference on thin film physics and applications, shanghai, peoples r china, may 31-jun 02, 2004
Li, JM
;
Chong, M
;
Duan, XF
;
Xu, JD
;
Gao, M
;
Wang, FL
收藏
  |  
浏览/下载:160/34
  |  
提交时间:2010/03/29
silicon
solar cells
V-shaped structure
Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition
会议论文
symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002
Zeng XB
;
Liao XB
;
Diao HW
;
Hu ZH
;
Xu YY
;
Zhang SB
;
Chen CY
;
Chen WD
;
Kong GL
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/10/29
LASER-ABLATION
SEMICONDUCTOR NANOWIRES
GROWTH
MECHANISM
EVAPORATION
DIAMETER
WIRES
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
Influence of precipitates on GaN epilayer quality
会议论文
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Kang JY
;
Huang QS
;
Wang ZG
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
precipitate
GaN
WDS
TEM
cathodoluminescence
VAPOR-PHASE EPITAXY
FILMS
MECHANISM
GROWTH
Mechanism on exciton-mediated energy transfer in erbium-doped silicon
会议论文
international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999
Lei HB
;
Yang QQ
;
Ou HY
;
Wang QM
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/11/15
Er-doped silicon
photoluminescence
energy transfer
AL2O3 WAVE-GUIDES
ER
ELECTROLUMINESCENCE
EPITAXY
GAAS
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells
会议论文
40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998
作者:
Zhang JY
;
Jiang DS
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/15
double multi-quantum wells
photocurrent spectra
ZnCdSe-ZnSe
SPECTROSCOPY
PHOTOLUMINESCENCE
HETEROSTRUCTURES
PHOTODETECTORS
Self-organization of the InGaAs GaAs quantum dots superlattice
会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhuang QD
;
Li HX
;
Pan L
;
Li JM
;
Kong MY
;
Lin LY
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
X-RAY-DIFFRACTION
ISLANDS
SURFACES
GROWTH
Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers
会议论文
40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998
Zhuang QD
;
Li JM
;
Zeng YP
;
Pan L
;
Chen YH
;
Kong MY
;
Lin LY
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
InGaAs GaAs quantum dots
infrared absorption
self-organization
X-RAY-DIFFRACTION
ISLANDS
TRANSITIONS
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