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科研机构
半导体研究所 [17]
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会议论文 [17]
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2008 [3]
2007 [1]
2006 [2]
2004 [4]
2003 [1]
2001 [2]
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半导体材料 [17]
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学科主题:半导体材料
内容类型:会议论文
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Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Yin, HB
;
Wang, XL
;
Hu, GX
;
Ran, JX
;
Xiao, HL
;
Li, JM
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
Magnetic resonant cavity composing of a three layered plasmonic nanostructure
会议论文
international workshop on metamaterials, nanjing, peoples r china, nov 09-12, 2008
Chen JJ
;
Fan ZC
;
Yang FH
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
Magnetic resonant
Combined transparent electrodes for high power GaN-based LEDs with long life time
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Wang, LC
;
Yi, XY
;
Wang, XD
;
Wang, GH
;
Li, JM
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/03/09
LIGHT-EMITTING-DIODES
EFFICIENCY
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
The study of high temperature annealing of a-SiC : H films
会议论文
3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005
Zhang, S
;
Hu, Z
;
Raniero, L
;
Liao, X
;
Ferreira, I
;
Fortunato, E
;
Vilarinho, P
;
Perreira, L
;
Martins, R
收藏
  |  
浏览/下载:209/71
  |  
提交时间:2010/03/29
silicon carbide
high temperature annealing
thin film
SILICON
PECVD
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
收藏
  |  
浏览/下载:95/18
  |  
提交时间:2010/03/29
ZnO
MOCVD
thermal annealing
photoluminescence
x-ray diffraction
atomic force microscopy
PULSED-LASER DEPOSITION
THIN-FILMS
PHOTOLUMINESCENCE
MECHANISMS
EPITAXY
CVD
SI
Study of infrared luminescence from Er-implanted GaN films
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
Chen WD
;
Song SF
;
Zhu JJ
;
Wang XL
;
Chen CY
;
Hsu CC
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/11/15
doping
metalorganic chemical vapor deposition
molecular beam epitaxy
gallium compounds
semiconducting gallium compounds
ERBIUM
A V-shaped module technique for promoting generation photocurrent density of silicon solar cells
会议论文
5th international conference on thin film physics and applications, shanghai, peoples r china, may 31-jun 02, 2004
Li, JM
;
Chong, M
;
Duan, XF
;
Xu, JD
;
Gao, M
;
Wang, FL
收藏
  |  
浏览/下载:160/34
  |  
提交时间:2010/03/29
silicon
solar cells
V-shaped structure
Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition
会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Wang, QY
;
Shen, WJ
;
Wang, J
;
Wang, JH
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:195/31
  |  
提交时间:2010/03/29
ULTRAVIOLET-LASER EMISSION
THIN-FILMS
ZINC-OXIDE
ROOM-TEMPERATURE
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:
Han PD
收藏
  |  
浏览/下载:83/1
  |  
提交时间:2010/10/29
metalorganic chemical vapor deposition
semiconducting III-V materials
DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES
CARRIER CONFINEMENT
EFFECT TRANSISTORS
PHOTOLUMINESCENCE
MOBILITY
HETEROJUNCTION
INTERFACE
HFETS
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