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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, CM; Wang, XL; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：119/30  |  提交时间：2010/03/29 HIGH BREAKDOWN VOLTAGE  MOBILITY TRANSISTORS  HETEROSTRUCTURES  SAPPHIRE  GANHEMTS   1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 会议论文 4th international conference on silicon epitaxy and heterostructures, awaji isl, japan, may 23-26, 2005 Yu, J; Kasper, E; Oehme, M 收藏  |  浏览/下载：146/20  |  提交时间：2010/03/29 SiGe   Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, XL; Wang, CM; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：154/51  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  2-DIMENSIONAL ELECTRON-GAS  BULK GAN  OPTIMIZATION  LAYERS  HEMTS   Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 作者:  Han PD 收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29 metalorganic chemical vapor deposition  semiconducting III-V materials  DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES  CARRIER CONFINEMENT  EFFECT TRANSISTORS  PHOTOLUMINESCENCE  MOBILITY  HETEROJUNCTION  INTERFACE  HFETS   Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 annealing  molecular beam epitaxy  germanium silicon alloys  semiconducting materials  STRAIN RELAXATION   High-quality GaN grown by gas-source MBE 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 characterization  molecular beam epitaxy  gallium compounds  nitrides  piezoelectric materials  semiconducting gallium compounds  MOLECULAR-BEAM EPITAXY  HETEROSTRUCTURES  SAPPHIRE  DIODES   Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文 40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998 作者:  Zhang JY;  Jiang DS 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 double multi-quantum wells  photocurrent spectra  ZnCdSe-ZnSe  SPECTROSCOPY  PHOTOLUMINESCENCE  HETEROSTRUCTURES  PHOTODETECTORS