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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：力学    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 会议论文 3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA 作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生) 收藏  |  浏览/下载：1133/44  |  提交时间：2007/12/18 3D Finite Volume Scheme for Czochralski Single Crystal Growth 会议论文 Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics,Sept. 5-10, 2004, Beijing,China, Beijing,China, Sept. 5-10, 2004 作者:  Chen QS(陈启生);  Zhang ZB(张自兵);  Chen QS(陈启生) 收藏  |  浏览/下载：910/21  |  提交时间：2007/12/18 Numerical Simulation of Heat Transfer and Kinetics in the Bulk Growth of Silicon Carbide 会议论文 Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics,Sept. 5-10, 2004, Beijing, China 作者:  Zhang ZB(张自兵);  Chen QS(陈启生) 收藏  |  浏览/下载：1474/121  |  提交时间：2007/12/18 3D Finite Volume Scheme for Czochralski Crystal Growth 会议论文 Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics, Sept. 5-10, 2004, Beijing, China 作者:  Zhang ZB(张自兵);  Chen QS(陈启生) 收藏  |  浏览/下载：1041/57  |  提交时间：2007/12/18 Modeling of Ammonothermal Growth of Gallium Nitride Single Crystals 会议论文 6th International Conference on Solvothermal Reactions, AUG 24-27, 2004 Mysore, INDIA 作者:  Chen QS(陈启生);  Pendurti S;  Prasad V 收藏  |  浏览/下载：1354/51  |  提交时间：2007/12/18 Transport Phenomena in Ammonothermal Growth of Gallium Nitride 会议论文 14th International Conference on Crystal Growth (ICCG-14, ICVGE-12) 作者:  Chen QS(陈启生) 收藏  |  浏览/下载：1259/30  |  提交时间：2007/12/18