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| Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文 Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39 作者: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu 收藏  |  浏览/下载:18/0  |  提交时间:2018/11/30 |
| High quantum efficiency N-structure type-II superlattice mid-wavelength infrared detector with resonant cavity enhanced design 期刊论文 Superlattices and Microstructures, 2017, 卷号: 105, 期号: 2017, 页码: 28-33 作者: Haoyue Wu; Yun Xu; Jian Li; Yu Jiang; Lin Bai 收藏  |  浏览/下载:11/0  |  提交时间:2018/11/30 |
| Suppression of optical field leakage to GaN substrate in GaN-based green laser diode 期刊论文 Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 484-489 作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu 收藏  |  浏览/下载:33/0  |  提交时间:2018/07/11 |
| Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications 期刊论文 Superlattices and Microstructures, 2017, 卷号: 111, 页码: 286-292 作者: Suyuan Wang; Jun Zheng; Chunlai Xue; Chuanbo Li; Yuhua Zuo 收藏  |  浏览/下载:16/0  |  提交时间:2018/07/02 |
| Different annealing temperature suitable for different Mg doped P-GaN 期刊论文 Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68 作者: S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang 收藏  |  浏览/下载:28/0  |  提交时间:2018/07/11 |
| Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文 superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225 Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du 收藏  |  浏览/下载:29/0  |  提交时间:2017/03/10 |
| Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition 期刊论文 superlattices and microstructures, 2016, 卷号: 91, 页码: 259-268 Fan Yang; Yuan-tao Zhang; Xu Han; Peng-chong Li; Jun-yan Jiang; Zhen Huang; Jing-zhi Yin; De-gang Zhao; Bao-lin Zhang; Guo-tong Du 收藏  |  浏览/下载:28/0  |  提交时间:2017/03/10 |
| Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文 superlattices and microstructures, 2016, 卷号: 97, 页码: 186-192 X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du 收藏  |  浏览/下载:26/0  |  提交时间:2017/03/10 |
| A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold 期刊论文 superlattices and microstructures, 2015, 卷号: 80, 期号: 2015, 页码: 111–117 X. Li; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; M. Shi; D.M. Zhao; W. Liu; J.J. Zhu; S.M. Zhang; H. Yang 收藏  |  浏览/下载:23/0  |  提交时间:2016/03/23 |
| The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters 期刊论文 superlattices and microstructures, 2015, 卷号: 88, 页码: 50-55 W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; X. Li; F. Liang; J.P. Liu; S.M. Zhang; H. Yang; Y.T. Zhang; G.T. Du 收藏  |  浏览/下载:20/0  |  提交时间:2016/03/23 |