Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition

	Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition
	Fan Yang ; Yuan-tao Zhang ; Xu Han ; Peng-chong Li ; Jun-yan Jiang ; Zhen Huang ; Jing-zhi Yin ; De-gang Zhao ; Bao-lin Zhang ; Guo-tong Du
刊名	superlattices and microstructures
	2016
卷号	91 页码:259-268
学科主题	光电子学
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27865]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Fan Yang,Yuan-tao Zhang,Xu Han,et al. Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition[J]. superlattices and microstructures,2016,91:259-268.
APA	Fan Yang.,Yuan-tao Zhang.,Xu Han.,Peng-chong Li.,Jun-yan Jiang.,...&Guo-tong Du.(2016).Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition.superlattices and microstructures,91,259-268.
MLA	Fan Yang,et al."Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition".superlattices and microstructures 91(2016):259-268.