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Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes 期刊论文
chinese physics letters, 2012, 卷号: 29, 期号: 11, 页码: 118503
Li B (Li Bin); Yang HW (Yang Huai-Wei); Gui Q (Gui Qiang); Yang XH (Yang Xiao-Hong); Wang J (Wang Jie); Wang XP (Wang Xiu-Ping); Liu SQ (Liu Shao-Qing); Han Q (Han Qin)
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/27
A practical route towards fabricating GaN nanowire arrays 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503
作者:  Dong Z;  Huang BJ
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Performance of an embedded optical vector matrix multiplication processor architecture 期刊论文
iet optoelectronics, 2010, 卷号: 4, 期号: 4, 页码: 159-164
Yang C (Yang C.); Cui GX (Cui G. X.); Huang YY (Huang Y. Y.); Wu L (Wu L.); Yang H (Yang H.); Zhang YH (Zhang Y. H.)
收藏  |  浏览/下载：548/53  |  提交时间：2010/09/07
Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015108
作者:  Wang H;  Zhao DG;  Zhang SM;  Yang H;  Yang H
收藏  |  浏览/下载：169/40  |  提交时间：2010/03/08
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:  Zhang SM
收藏  |  浏览/下载：84/0  |  提交时间：2010/04/11
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 9, 页码: art.no.092114
Wang H (Wang H.); Huang Y (Huang Y.); Sun Q (Sun Q.); Chen J (Chen J.); Wang LL (Wang L. L.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Wang YT (Wang Y. T.); Yang H (Yang H.)
收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11
Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 14, 页码: art.no.143505
Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Shi SL (Shi S. L.); Beling CD (Beling C. D.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.)
收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11
The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文
journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193
Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL
收藏  |  浏览/下载：85/0  |  提交时间：2010/08/12

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