Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area
	Wang H; Zhao DG; Zhang SM; Yang H; Yang H; Wang YT; Zhu JJ; Wang H; Jiang DS
刊名	journal of physics d-applied physics
	2009
卷号	42 期号:1 页码:art. no. 015108
关键词	SURFACE-MORPHOLOGY DETECTORS GROWTH
ISSN号	0022-3727
通讯作者	liu wb chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. e-mail address: wbliu@semi.ac.cn ; dgzhao@red.semi.ac.cn
中文摘要	visible-blind p-i-n avalanche photodiodes (apds) were fabricated with high-quality gan epilayers deposited on c-plane sapphire substrates by metal-organic chemical vapour deposition. due to low dislocation density and a sophisticated device fabrication process, the dark current was as small as similar to 0.05 na under reverse bias up to 20v for devices with a large diameter of 200 mu m, which was among the largest device area for gan-based p-i-n apds yet reported. when the reverse bias exceeded 38v the dark current increased sharply, exhibiting a bulk avalanche field-dominated stable breakdown without microplasma formation or sidewall breakdown. with ultraviolet illumination (360 nm) an avalanche multiplication gain of 57 was achieved.
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china 60506001 60476021605760036077604760836003national basic research program 2007cb936700 this work was supported by the national natural science foundation of china (grant nos 60506001, 60476021, 60576003, 60776047 and 60836003) and the national basic research program (2007cb936700).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7473]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang H,Zhao DG,Zhang SM,et al. Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area[J]. journal of physics d-applied physics,2009,42(1):art. no. 015108.
APA	Wang H.,Zhao DG.,Zhang SM.,Yang H.,Yang H.,...&Jiang DS.(2009).Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area.journal of physics d-applied physics,42(1),art. no. 015108.
MLA	Wang H,et al."Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area".journal of physics d-applied physics 42.1(2009):art. no. 015108.