Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts

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	Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts
	Wang RX (Wang R. X.) ; Xu SJ (Xu S. J.) ; Shi SL (Shi S. L.) ; Beling CD (Beling C. D.) ; Fung S (Fung S.) ; Zhao DG (Zhao D. G.) ; Yang H (Yang H.) ; Tao XM (Tao X. M.)
刊名	applied physics letters
	2006
卷号	89 期号:14 页码:art.no.143505
关键词	DISLOCATIONS DEGRADATION
ISSN号	0003-6951
通讯作者	wang, rx, univ hong kong, dept phys, pokfulam rd, hong kong, hong kong, peoples r china. e-mail: sjxu@hkucc.hku.hk
中文摘要	under identical preparation conditions, au/gan schottky contacts were prepared on two kinds of gan epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. current-voltage (i-v) and variable-frequency capacitance-voltage (c-v) characteristics show that the schottky contacts on the gan epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias i-v and c-v characteristics. this is attributed to the presence of deep level centers. theoretical simulation of the low-frequency c-v curves leads to a determination of the density and energy level position of the deep centers. (c) 2006 american institute of physics.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10372]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang RX ,Xu SJ ,Shi SL ,et al. Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts[J]. applied physics letters,2006,89(14):art.no.143505.
APA	Wang RX .,Xu SJ .,Shi SL .,Beling CD .,Fung S .,...&Tao XM .(2006).Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts.applied physics letters,89(14),art.no.143505.
MLA	Wang RX ,et al."Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts".applied physics letters 89.14(2006):art.no.143505.