CORC

在结果中检索

CORC

浏览/检索结果: 共10条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10
Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
materials technology, 2016
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：22/0  |  提交时间：2017/03/10
A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold 期刊论文
superlattices and microstructures, 2015, 卷号: 80, 期号: 2015, 页码: 111–117
X. Li; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; M. Shi; D.M. Zhao; W. Liu; J.J. Zhu; S.M. Zhang; H. Yang
收藏  |  浏览/下载：23/0  |  提交时间：2016/03/23
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Sun, G (Sun, Guosheng); Ning, J (Ning, Jin); Liu, X (Liu, Xingfang); Zhao, Y (Zhao, Yongmei); Li, J (Li, Jiaye); Wang, L (Wang, Lei); Zhao, W (Zhao, Wanshun); Wang, L (Wang, Liang)
收藏  |  浏览/下载：87/29  |  提交时间：2010/03/29
A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure 期刊论文
semiconductor science and technology, 2007, 卷号: 22, 期号: 3, 页码: 283-286
Zhang RY (Zhang Ruiying); Zhou F (Zhou Fan); Bian J (Bian Jing); Zhao LJ (Zhao Lingjuan); Jian SS (Jian Shuisheng); Yu SY (Yu Siyuan); Wang W (Wang Wei)
收藏  |  浏览/下载：63/0  |  提交时间：2010/03/29
Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 25, 页码: art.no.252101
Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Liang JW (Liang J. W.); Hao XP (Hao X. P.); Wei L (Wei L.); Li X (Li X.); Li XY (Li X. Y.); Gong HM (Gong H. M.)
收藏  |  浏览/下载：57/0  |  提交时间：2010/04/11
Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 4, 页码: art.no.041903
作者:  Zhao DG
收藏  |  浏览/下载：38/0  |  提交时间：2010/04/11
Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 11, 页码: art.no.112106
Zhao DG (Zhao D. G.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Jiang DS (Jiang D. S.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Wang YT (Wang Y. T.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：14/0  |  提交时间：2010/04/11
Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping 期刊论文
pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1663-1667
Zhang RY; Wang W; Zhou F; Bian J; Zhao LJ; Zhu HL; Jian SS
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/17
Growth of Fe doped semi-insulating InP by LP-MOCVD 会议论文
conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998
Yan XJ; Zhu HL; Wang W; Xu GY; Zhou F; Ma CH; Wang XJ; Tian HL; Zhang JY; Wu RH; Wang QM
收藏  |  浏览/下载：19/0  |  提交时间：2010/10/29

©版权所有 ©2017 CSpace - Powered by CSpace