Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping

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	Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping
	Zhang RY ; Wang W ; Zhou F ; Bian J ; Zhao LJ ; Zhu HL ; Jian SS
刊名	pricm 5: the fifth pacific rim international conference on advanced materials and processing
	2005
卷号	pts 1-5 期号:475-479 页码:1663-1667
关键词	1.5 mu m InGaAsP/InGaAsP
ISSN号	0255-5476
通讯作者	zhang, ry, chinese acad sci, inst semicond, natl res ctr optoelect technol, pob 912, beijing 100083, peoples r china. 电子邮箱地址: ryzhang@red.semi.ac.cn ; wwang@red.semi.ac.cn
中文摘要	1.5 mu m. n-type modulation-doping ingaasp/ingaasp strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. n-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. the lowest threshold current density we obtained was 1052.5 a/cm(2) for 1000 mu m long lasers with seven quantum wells. the estimated threshold current density for an infinite cavity length was 94.72a/cm(2)/well, reduced by 23.3% compared with undoped barrier lasers. the n-type modulation doping effects on the lasing characteristics in 1.5 mu m devices have been demonstrated.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8760]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang RY,Wang W,Zhou F,et al. Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping[J]. pricm 5: the fifth pacific rim international conference on advanced materials and processing,2005,pts 1-5(475-479):1663-1667.
APA	Zhang RY.,Wang W.,Zhou F.,Bian J.,Zhao LJ.,...&Jian SS.(2005).Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping.pricm 5: the fifth pacific rim international conference on advanced materials and processing,pts 1-5(475-479),1663-1667.
MLA	Zhang RY,et al."Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping".pricm 5: the fifth pacific rim international conference on advanced materials and processing pts 1-5.475-479(2005):1663-1667.