Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
	Sun, G (Sun, Guosheng) ; Ning, J (Ning, Jin) ; Liu, X (Liu, Xingfang) ; Zhao, Y (Zhao, Yongmei) ; Li, J (Li, Jiaye) ; Wang, L (Wang, Lei) ; Zhao, W (Zhao, Wanshun) ; Wang, L (Wang, Liang)
	2007
会议名称	6th european conference on silicon carbide and related materials
会议日期	sep, 2006
会议地点	newcastle upon tyne, england
关键词	polycrystalline 3C-SiC resonator doping SILICON-CARBIDE
页码	556-557: 179-182
通讯作者	sun, g, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	3c-sic is a promising material for the development of microelectromechanical systems (mems) applications in harsh environments. this paper presents the lpcvd growth of heavily nitrogen doped polycrystalline 3c-sic films on si wafers with 2.0 mu m-thick silicon dioxide (sio2) films for resonator applications. the growth has been performed via chemical vapor deposition using sih4 and c2h4 precursor gases with carrier gas of h-2 in a newly developed vertical cvd chamber. nh3 was used as n-type dopant. 3c-sic films were characterized by scanning electron microscopy (sem), x-ray diffraction (xrd), x-ray photoelectron spectroscopy (xps), secondary ion mass spectroscopy (sims), and room temperature hall effect measurements. it was shown that there is no voids at the interface between 3c-sic and sio2. undoped 3c-sic films show n-type conduction with resisitivity, hall mobility, and carrier concentration at room temperature of about 0.56 omega center dot cm, 54 cm(2)/vs, and 2.0x 10(17) cm(-3), respectively. the heavily nitrogen doped polycrystalline 3c-sic with the resisitivity of less than 10(-3) omega center dot cm was obtained by in-situ doping. polycrystalline sic resonators have been fabricated preliminarily on these heavily doped sic films with thickness of about 2 mu m. resonant frequency of 49.1 khz was obtained under atmospheric pressure.
英文摘要	3c-sic is a promising material for the development of microelectromechanical systems (mems) applications in harsh environments. this paper presents the lpcvd growth of heavily nitrogen doped polycrystalline 3c-sic films on si wafers with 2.0 mu m-thick silicon dioxide (sio2) films for resonator applications. the growth has been performed via chemical vapor deposition using sih4 and c2h4 precursor gases with carrier gas of h-2 in a newly developed vertical cvd chamber. nh3 was used as n-type dopant. 3c-sic films were characterized by scanning electron microscopy (sem), x-ray diffraction (xrd), x-ray photoelectron spectroscopy (xps), secondary ion mass spectroscopy (sims), and room temperature hall effect measurements. it was shown that there is no voids at the interface between 3c-sic and sio2. undoped 3c-sic films show n-type conduction with resisitivity, hall mobility, and carrier concentration at room temperature of about 0.56 omega center dot cm, 54 cm(2)/vs, and 2.0x 10(17) cm(-3), respectively. the heavily nitrogen doped polycrystalline 3c-sic with the resisitivity of less than 10(-3) omega center dot cm was obtained by in-situ doping. polycrystalline sic resonators have been fabricated preliminarily on these heavily doped sic films with thickness of about 2 mu m. resonant frequency of 49.1 khz was obtained under atmospheric pressure.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:10z (gmt). no. of bitstreams: 1 2278.pdf: 1016692 bytes, checksum: 9fb366681f7969c266862c7f73f73985 (md5) previous issue date: 2007; ii vi inc.; iii vs review.; cree inc.; compound semicond.; dow corning compound semicond solut.; lpe.; norstel ab.; semisouth.; siced.; sicrystal.; surface technol syst plc.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ii vi inc.; iii vs review.; cree inc.; compound semicond.; dow corning compound semicond solut.; lpe.; norstel ab.; semisouth.; siced.; sicrystal.; surface technol syst plc.
会议录	silicon carbide and related materials 2006丛书标题: materials science forum
会议录出版者	trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland
会议录出版地	laublsrutistr 24, ch-8717 stafa-zurich, switzerland
学科主题	光电子学
语种	英语
ISSN号	0255-5476
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9854]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun, G ,Ning, J ,Liu, X ,et al. Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications[C]. 见:6th european conference on silicon carbide and related materials. newcastle upon tyne, england. sep, 2006.