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| Fabrication of two-dimensional Ta2O5 photonic crystal slabs with ultra-low background emission toward highly sensitive fluorescence spectroscopy 期刊论文
optics express, 2011, 卷号: 19, 期号: 2, 页码: 1422-1428
Kaji T; Yamada T; Ueda R; Xu XS; Otomo A
  收藏 | 浏览/下载：61/6 | 提交时间：2011/07/05
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| High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013
Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM
收藏 | 浏览/下载：64/3 | 提交时间：2011/07/05
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| Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏 | 浏览/下载：97/7 | 提交时间：2011/07/05
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| Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
收藏 | 浏览/下载：71/4 | 提交时间：2011/07/05
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| Bimetallic chips for a surface plasmon resonance instrument 期刊论文
applied optics, 2011, 卷号: 50, 期号: 3, 页码: 387-391
Chen Y; Zheng RS; Zhang DG; Lu YH; Wang P; Ming H; Luo ZF; Kan Q
收藏 | 浏览/下载：56/2 | 提交时间：2011/07/05
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| A new method to measure the carrier concentration of p-GaN 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M; Zhao DG
收藏 | 浏览/下载：66/7 | 提交时间：2011/07/05
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| Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.28101
Su SJ; Wang W; Zhang GZ; Hu WX; Bai AQ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏 | 浏览/下载：55/3 | 提交时间：2011/07/05
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| Effective recombination velocity of textured surfaces 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 19, 页码: art. no. 193107
Xiong KL (Xiong Kanglin); Lu SL (Lu Shulong); Jiang DS (Jiang Desheng); Dong JR (Dong Jianrong); Yang H (Yang Hui)
收藏 | 浏览/下载：119/3 | 提交时间：2010/06/04
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| Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307
作者: Zhang SM ; Wang LJ; Wang YT; Yang H; Wang LJ
收藏 | 浏览/下载：107/3 | 提交时间：2010/04/05
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| Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 23, 页码: article no.233304
Ran GZ; Jiang DF; Kan Q; Chen HD
收藏 | 浏览/下载：45/3 | 提交时间：2011/07/05
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