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科研机构
半导体研究所 [20]
内容类型
期刊论文 [19]
会议论文 [1]
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2011 [4]
2010 [5]
2009 [2]
2008 [2]
2006 [3]
2003 [1]
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光电子学 [20]
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Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure
期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者:
Xue CL
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  |  
浏览/下载:63/4
  |  
提交时间:2011/07/05
Multilayers
Inorganic compounds
Sputtering
Optical properties
DOPED SI/SIO2 SUPERLATTICES
ERBIUM SILICATE
ER3+
LUMINESCENCE
FILMS
PHOTOLUMINESCENCE
Omnidirectional absorption enhancement in hybrid waveguide-plasmon system
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 26, 页码: 261101
Zhang J
;
Bai WL
;
Cai LK
;
Chen X
;
Song GF
;
Gan QQ
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  |  
浏览/下载:17/0
  |  
提交时间:2012/02/06
ARRAYS
FILMS
LIGHT
Investigation of flexible electrodes modified by TiN, Pt black and IrO (x)
期刊论文
science china-technological sciences, 2011, 卷号: 54, 期号: 9, 页码: 2305-2309
Li XQ
;
Pei WH
;
Tang RY
;
Gui Q
;
Guo K
;
Wang Y
;
Chen HD
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  |  
浏览/下载:16/0
  |  
提交时间:2011/09/14
IRIDIUM OXIDE
STIMULATION
INTERFACES
SYSTEM
FILMS
ARRAY
A new method to measure the carrier concentration of p-GaN
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M
;
Zhao DG
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  |  
浏览/下载:66/7
  |  
提交时间:2011/07/05
p-GaN
carrier concentration measurement
ultraviolet photodetector
LASER-DIODES
FILMS
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun)
;
Zhu JJ (Zhu Jian-Jun)
;
Jiang DS (Jiang De-Sheng)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
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  |  
浏览/下载:110/2
  |  
提交时间:2010/04/22
metalorganic chemical vapor deposition
Al1-xInxN
gradual variation in composition
optical reflectance spectra
X-RAY-DIFFRACTION
PHASE EPITAXY
RELAXATION
FILMS
HETEROSTRUCTURES
SEPARATION
DYNAMICS
ALLOYS
REGION
LAYERS
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
;
Zhang SM (Zhang Shu-Ming)
;
Jiang DS (Jiang De-Sheng)
;
Liu ZS (Liu Zong-Shun)
;
Zhao DG (Zhao De-Gang)
;
Wang H (Wang Hui)
;
Wang YT (Wang Yu-Tian)
;
Yang H (Yang Hui)
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  |  
浏览/下载:127/4
  |  
提交时间:2010/04/13
GaN
Si (111) substrate
metalorganic chemical vapour deposition
AlN buffer layer
AlGaN interlayer
: VAPOR-PHASE EPITAXY
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
ALXGA1-XN
FILM
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector
期刊论文
: journal of alloys and compounds, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
作者:
Zhu JJ
;
Yang H
;
Yang H
;
Zhao DG
;
Zhang SM
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  |  
浏览/下载:231/10
  |  
提交时间:2010/04/13
Nitride materials
Photoconductivity and photovoltaics
Computer simulations
FILMS
Fiber Dispersion and Nonlinearity Influences on Transmissions of AM and FM Data Modulation Signals in Radio-Over-Fiber System
期刊论文
ieee journal of quantum electronics, 46 (8): 1170-1177 aug 2010, 2010, 卷号: 46, 期号: 8, 页码: 1170-1177
Qi XQ (Qi Xiaoqiong)
;
Liu JM (Liu Jiaming)
;
Zhang XP (Zhang Xiaoping)
;
Xie L (Xie Liang)
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  |  
浏览/下载:23/0
  |  
提交时间:2010/05/04
Amplitude modulation (AM)
double side band (DSB)
frequency modulation (FM)
optical carrier Suppression (OCS)
radio-over-fiber (RoF)
single side band (SSB)
INJECTED SEMICONDUCTOR-LASER
CHROMATIC DISPERSION
OPTICAL-SYSTEMS
MICROWAVE
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang)
;
Zhang S (Zhang Shuang)
;
Liu WB (Liu Wen-Bao)
;
Hao XP (Hao Xiao-Peng)
;
Jiang DS (Jiang De-Sheng)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Wang H (Wang Hui)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
;
Wei L (Wei Long)
收藏
  |  
浏览/下载:73/2
  |  
提交时间:2010/05/24
Ga vacancies
MOCVD
GaN
Schottky barrier photodetector
REVERSE-BIAS LEAKAGE
MOLECULAR-BEAM EPITAXY
P-N-JUNCTIONS
POSITRON-ANNIHILATION
DIODES
FILMS
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:
Yang H
;
Jiang DS
;
Zhao DG
;
Zhang SM
;
Yang H
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  |  
浏览/下载:88/41
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
ELECTRON-TRANSPORT
BAND-GAP
FILMS
SAPPHIRE
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