Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector

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	Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector
	Zhu JJ; Yang H; Yang H; Zhao DG; Zhang SM; Jiang DS
刊名	: journal of alloys and compounds
	2010
卷号	492 期号:1-2 页码:300-302
关键词	Nitride materials Photoconductivity and photovoltaics Computer simulations FILMS
通讯作者	zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail address: dgzhao@red.semi.ac.cn
合作状况	其它
英文摘要	a new method to test the hole concentration of p-type gan is proposed, which is carried out by analyzing the spectral response of p-n(+) structure gan ultraviolet photodetector. it is shown that the spectral response of the photodetector changes considerably with reversed bias. it is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. according to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-gan layer starts to be completely depleted. based on this effect the carrier concentration of p-gan can be derived.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-13t02:29:57z no. of bitstreams: 1 hole concentration test of p-type gan by analyzing the spectral response of p-n(+) structure gan ultraviolet photodetector.pdf: 327083 bytes, checksum: 492330ba4982cc26a9eaa5a3d4392327 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-13t02:30:54z (gmt) no. of bitstreams: 1 hole concentration test of p-type gan by analyzing the spectral response of p-n(+) structure gan ultraviolet photodetector.pdf: 327083 bytes, checksum: 492330ba4982cc26a9eaa5a3d4392327 (md5); made available in dspace on 2010-04-13t02:30:54z (gmt). no. of bitstreams: 1 hole concentration test of p-type gan by analyzing the spectral response of p-n(+) structure gan ultraviolet photodetector.pdf: 327083 bytes, checksum: 492330ba4982cc26a9eaa5a3d4392327 (md5) previous issue date: 2010; national natural science foundation of china 10990100 60836003 60776047；national science fund for distinguished young scholars 60925017；national basic research program of china 2007cb936700；national high technology research and development program of china 2007aa03z401; 其它
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china 10990100 60836003 60776047；national science fund for distinguished young scholars 60925017；national basic research program of china 2007cb936700；national high technology research and development program of china 2007aa03z401
语种	英语
公开日期	2010-04-13 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11142]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Zhu JJ,Yang H,Yang H,et al. Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector[J]. : journal of alloys and compounds,2010,492(1-2):300-302.
APA	Zhu JJ,Yang H,Yang H,Zhao DG,Zhang SM,&Jiang DS.(2010).Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector.: journal of alloys and compounds,492(1-2),300-302.
MLA	Zhu JJ,et al."Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector".: journal of alloys and compounds 492.1-2(2010):300-302.