CORC

在结果中检索

CORC

浏览/检索结果: 共16条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117
作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H
收藏  |  浏览/下载：49/3  |  提交时间：2011/07/05
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏  |  浏览/下载：98/7  |  提交时间：2011/07/05
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载：72/4  |  提交时间：2011/07/05
Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method 期刊论文
journal of luminescence, 2010, 卷号: 130, 期号: 10, 页码: 1760-1763
Zheng J (Zheng J.); Zuo YH (Zuo Y. H.); Zhang LZ (Zhang L. Z.); Wang W (Wang W.); Xue CL (Xue C. L.); Cheng BW (Cheng B. W.); Yu JZ (Yu J. Z.); Guo HQ (Guo H. Q.); Wang QM (Wang Q. M.)
收藏  |  浏览/下载：105/4  |  提交时间：2010/09/07
The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117801
Hu XL (Hu Xiao-Long); Zhang JY (Zhang Jiang-Yong); Shang JZ (Shang Jing-Zhi); Liu WJ (Liu Wen-Jie); Zhang BP (Zhang Bao-Ping)
收藏  |  浏览/下载：40/0  |  提交时间：2010/12/28
Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 2, 页码: art. no. 025107
作者:  Yang H;  Lu GJ;  Zhang SM;  Zhao DG;  Yang H
收藏  |  浏览/下载：66/1  |  提交时间：2010/03/08
The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer 期刊论文
journal of crystal growth, 2007, 卷号: 303, 期号: 2, 页码: 414-418
作者:  Zhang SM;  Yang H;  Zhu JJ;  Jiang DS;  Yang H
收藏  |  浏览/下载：42/0  |  提交时间：2010/03/29
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Improved surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot active regions by introducing annealing processes 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 8, 页码: art.no.081902
Yang T (Yang Tao); Tatebayashi J (Tatebayashi Jun); Nishioka M (Nishioka Masao); Arakawa Y (Arakawa Yasuhiko)
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Surface morphology of AlN buffer layer and its effect on GaN growth by metalorganic chemical vapor deposition 期刊论文
applied physics letters, 2004, 卷号: 85, 期号: 9, 页码: 1499-1501
Zhao, DG; Zhu, JJ; Liu, ZS; Zhang, SM; Yang, H; Jiang, DS
收藏  |  浏览/下载：259/63  |  提交时间：2010/03/09

©版权所有 ©2017 CSpace - Powered by CSpace