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CORC

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An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：147/11  |  提交时间：2010/04/04
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：89/41  |  提交时间：2010/03/08
Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111) 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914
Liu W; Zhu JJ; Jiang S; Yang H; Wang JF
收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29
Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文
physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui)
收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29
Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文
materials letters, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419
Sun JY (Sun Jiayin); Chen J (Chen Jing); Wang X (Wang Xi); Wang JF (Wang Jianfeng); Liu W (Liu Wei); Zhu JJ (Zhu Jianjun); Yang H (Yang Hui)
收藏  |  浏览/下载：40/0  |  提交时间：2010/03/29
MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 734-739
作者:  Pan JQ
收藏  |  浏览/下载：58/0  |  提交时间：2010/04/11
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 1, 页码: 72-75
作者:  Jiang DS;  Li XY;  Zhu JJ;  Yang H;  Zhao DG
收藏  |  浏览/下载：96/0  |  提交时间：2010/04/11
A 10-GHz bandwidth electroabsorption modulated laser by ultra-low-pressure selective area growth 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2016-2019
Zhao, Q; Pan, JQ; Zhou, F; Wang, BJ; Wang, LF; Wang, W
收藏  |  浏览/下载：34/14  |  提交时间：2010/03/17
MOVPE  
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
作者:  Zhao DG
收藏  |  浏览/下载：6/0  |  提交时间：2010/11/15

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