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科研机构
半导体研究所 [10]
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会议论文 [6]
期刊论文 [4]
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2015 [1]
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光电子学 [10]
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Designing and optimizing highly efficient grating for high-brightness laser based on spectral beam combining
期刊论文
journal of applied physics, 2015, 卷号: 117, 页码: 103108
Ying-Ying Yang
;
Ya-Ping Zhao
;
Li-Rong Wang
;
Ling Zhang
;
Xue-Chun Lin
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2016/04/08
High-brightness single-mode double-tapered laser diodes with laterally coupled high-order surface grating
期刊论文
optics letters, 2014, 卷号: 39, 期号: 11, 页码: 3231-3234
Liu, L
;
Qu, HW
;
Wang, YF
;
Liu, Y
;
Zhang, YJ
;
Zheng, WH
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  |  
浏览/下载:37/0
  |  
提交时间:2015/03/20
High-brightness diode laser arrays integrated with a phase shifter designed for single-lobe far-field pattern
期刊论文
optics letters, 2013, 卷号: 38, 期号: 15, 页码: 2770-2772
Lei Liu, Jianxin Zhang, Shaodong Ma, Aiyi Qi, Hongwei Qu, Yejin Zhang, and Wanhua Zheng
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  |  
浏览/下载:20/0
  |  
提交时间:2014/04/09
High brightness InAs/GaAs quantum dot tapered laser at 1.3 mu m with high temperature stability
会议论文
conference on semiconductor lasers and applications iv, beijing, peoples r china, oct 18-19, 2010
Cao YL (Cao Yu-Lian)
;
Xu PF (Xu Peng-fei)
;
Ji HM (Ji Hai-Ming)
;
Yang T (Yang Tao)
;
Chen LH (Chen Liang-Hui)
收藏
  |  
浏览/下载:53/4
  |  
提交时间:2011/07/14
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
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  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
GaN
nitrides
LED
MOCVD
patterned sapphire substrate
wet etching
Design of high brightness cubic-GaN LEDs grown on GaAs substrate
会议论文
11th seoul international symposium on the physics of semiconductors and applications, seoul, south korea, aug 20-23, 2002
作者:
Zhao DG
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  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
wafer bunding
cubic GaN
LIGHT-EMITTING-DIODES
FIELD-EFFECT TRANSISTOR
SINGLE-CRYSTAL GAN
MICROWAVE PERFORMANCE
MIRROR
JUNCTION
Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m)
期刊论文
ieee journal of selected topics in quantum electronics, 2000, 卷号: 6, 期号: 4, 页码: 577-584
Yang GW
;
Hwu RJ
;
Xu ZT
;
Ma XY
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  |  
浏览/下载:47/0
  |  
提交时间:2010/08/12
quantum-well lasers
semiconductor diodes
semiconductor epitaxial layers
semiconductor lasers
semiconductor materials
OPERATION
SINGLE
Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes
会议论文
4th conference on light-emitting diodes (leds), san jose, ca, jan 26-27, 2000
Wang GH
;
Ma XY
;
Zhang YF
;
Wang ST
;
Li YZ
;
Chen LH
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  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
native oxided AlAs
current blocking layer
AlGaInP
high brightness light emitting diodes
High brightness AlGaInP orange light emitting diodes
会议论文
conference on display devices and systems ii, beijing, peoples r china, sep 16-17, 1998
Li YZ
;
Wang GH
;
Ma XY
;
Peng HI
;
Wang ST
;
Chen LH
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/10/29
high brightness
LED
MOCVD
AlGaInP
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes
会议论文
conference on display devices and systems ii, beijing, peoples r china, sep 16-17, 1998
Wang GH
;
Ma XY
;
Zhang YF
;
Peng HI
;
Wang ST
;
Li YZ
;
Chen LH
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/10/29
LED
coupled distributed Bragg reflector
MOCVD
AlGaInP
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