Design of high brightness cubic-GaN LEDs grown on GaAs substrate

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	Design of high brightness cubic-GaN LEDs grown on GaAs substrate
	Zhao DG
	2003
会议名称	11th seoul international symposium on the physics of semiconductors and applications
会议日期	aug 20-23, 2002
会议地点	seoul, south korea
关键词	wafer bunding cubic GaN LIGHT-EMITTING-DIODES FIELD-EFFECT TRANSISTOR SINGLE-CRYSTAL GAN MICROWAVE PERFORMANCE MIRROR JUNCTION
页码	s753-s756
通讯作者	sun yp chinese acad sci state key lab integrated optoelect inst semicond beijing 100083 peoples r china.
中文摘要	the principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of gan/gaas optical devices by wafer-bonding technique. the calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown gan/gaas samples when a thin ni layer was used as adhesive layer and ag layer as reflective layer. full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.
英文摘要	the principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of gan/gaas optical devices by wafer-bonding technique. the calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown gan/gaas samples when a thin ni layer was used as adhesive layer and ag layer as reflective layer. full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:07导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:07z (gmt). no. of bitstreams: 1 2824.pdf: 176450 bytes, checksum: 1926f0c3b963ca8c063674e3d578b766 (md5) previous issue date: 2003; aixtron ag.; epichem inc.; kodenshi auk.; lg electr inst technol.; luxpia co ltd.; natl program tera level nanodevices.; thomas swan sci equipment ltd.; kyung hee univ, adv display res ctr.; sungkyunkwan univ, ctr nanotubes & nanostruct composites.; dongguk univ, quantum funct semiconductor res ctr.; chonbuk natl univ, semiconductor phys res ctr.; chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	aixtron ag.; epichem inc.; kodenshi auk.; lg electr inst technol.; luxpia co ltd.; natl program tera level nanodevices.; thomas swan sci equipment ltd.; kyung hee univ, adv display res ctr.; sungkyunkwan univ, ctr nanotubes & nanostruct composites.; dongguk univ, quantum funct semiconductor res ctr.; chonbuk natl univ, semiconductor phys res ctr.
会议录	journal of the korean physical society, 42
会议录出版者	korean physical soc ; 635-4, yuksam-dong, kangnam-ku, seoul 135-703, south korea
会议录出版地	635-4, yuksam-dong, kangnam-ku, seoul 135-703, south korea
学科主题	光电子学
语种	英语
ISSN号	0374-4884
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14859]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG. Design of high brightness cubic-GaN LEDs grown on GaAs substrate[C]. 见:11th seoul international symposium on the physics of semiconductors and applications. seoul, south korea. aug 20-23, 2002.