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CORC

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GaN high electron mobility transistors with AlInN back barriers 期刊论文
journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19
X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文
thin solid films, 2014, 卷号: 564, 页码: 135-139
He, XG; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Le, LC; Yang, J; Li, XJ; Zhang, SM; Zhu, JJ; Wang, H; Yang, H
收藏  |  浏览/下载：32/0  |  提交时间：2015/03/25
Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 11, 页码: 117306
Tan, Ren-Bing; Qin, Hua; Zhang, Xiao-Yu; Xu, Wen
收藏  |  浏览/下载：13/0  |  提交时间：2014/05/16
High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules 期刊论文
technical digest- international electron devices meeting, iedm, 2011, 页码: 16.7.1-16.7.3
Han, Genquan; Su, Shaojian; Zhan, Chunlei; Zhou, Qian; Yang, Yue; Wang, Lanxiang; Guo, Pengfei; Wei, Wang; Wong, Choun Pei; Shen, Ze Xiang; Cheng, Buwen; Yeo, Yee-Chia
收藏  |  浏览/下载：21/0  |  提交时间：2012/06/13
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117
作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H
收藏  |  浏览/下载：48/3  |  提交时间：2011/07/05
Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 25, 页码: 252103
Sun, Y.F.; Sun, J.D.; Zhou, Y.; Tan, R.B.; Zeng, C.H.; Xue, W.; Qin, H.; Zhang, B.S.; Wu, D.M.,
收藏  |  浏览/下载：36/0  |  提交时间：2012/06/13
Effective recombination velocity of textured surfaces 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 19, 页码: art. no. 193107
Xiong KL (Xiong Kanglin); Lu SL (Lu Shulong); Jiang DS (Jiang Desheng); Dong JR (Dong Jianrong); Yang H (Yang Hui)
收藏  |  浏览/下载：119/3  |  提交时间：2010/06/04
A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 3, 页码: 87-91
Du Rui; Dai Yang; Chen Yanling; Yang Fuhua
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/23
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08
The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1113-1117
Wang, XL (Wang, X. L.); Zhao, DG (Zhao, D. G.); Jahn, U (Jahn, U.); Ploog, K (Ploog, K.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.); Liang, JW (Liang, J. W.)
收藏  |  浏览/下载：68/0  |  提交时间：2010/03/29

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