High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules

	High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules
	Han, Genquan ; Su, Shaojian ; Zhan, Chunlei ; Zhou, Qian ; Yang, Yue ; Wang, Lanxiang ; Guo, Pengfei ; Wei, Wang ; Wong, Choun Pei ; Shen, Ze Xiang ; Cheng, Buwen ; Yeo, Yee-Chia
刊名	technical digest- international electron devices meeting, iedm
	2011
页码	16.7.1-16.7.3
关键词	Electron devices Germanium Tin
ISSN号	01631918
通讯作者	han, g.
学科主题	光电子学
收录类别	EI
语种	英语
公开日期	2012-06-13
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22942]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Han, Genquan,Su, Shaojian,Zhan, Chunlei,et al. High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules[J]. technical digest- international electron devices meeting, iedm,2011:16.7.1-16.7.3.
APA	Han, Genquan.,Su, Shaojian.,Zhan, Chunlei.,Zhou, Qian.,Yang, Yue.,...&Yeo, Yee-Chia.(2011).High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules.technical digest- international electron devices meeting, iedm,16.7.1-16.7.3.
MLA	Han, Genquan,et al."High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules".technical digest- international electron devices meeting, iedm (2011):16.7.1-16.7.3.