A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

	A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic
	Du Rui ; Dai Yang ; Chen Yanling ; Yang Fuhua
刊名	半导体学报
	2009
卷号	30 期号:3 页码:87-91
中文摘要	a voltage-controlled ring oscillator (vco) based on a full enhancement-mode inaias/ingaas/inp high electron mobility transistor (hemt) logic is proposed. an enhancement-mode hemt (e-hemt) is fabricated, whose threshold is demonstrated to be 10 mv. the model of the e-hemt is established and used in the spice simulation of the vco. the result proves that the full e-hemt logic technology can be applied to the vco. and compared with the hemt dcfl technology, the complexity of our fabrication process is reduced and the reliability is improved.
学科主题	光电子学
收录类别	CSCD
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15663]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Du Rui,Dai Yang,Chen Yanling,et al. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. 半导体学报,2009,30(3):87-91.
APA	Du Rui,Dai Yang,Chen Yanling,&Yang Fuhua.(2009).A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic.半导体学报,30(3),87-91.
MLA	Du Rui,et al."A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic".半导体学报 30.3(2009):87-91.