QQ客服 官方微博 反馈留言

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：光电子学    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Sun, G (Sun, Guosheng); Ning, J (Ning, Jin); Liu, X (Liu, Xingfang); Zhao, Y (Zhao, Yongmei); Li, J (Li, Jiaye); Wang, L (Wang, Lei); Zhao, W (Zhao, Wanshun); Wang, L (Wang, Liang) 收藏  |  浏览/下载：89/29  |  提交时间：2010/03/29 polycrystalline 3C-SiC  resonator  doping  SILICON-CARBIDE   Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding 会议论文 conference on optoelectronic materials and devices, gwangju, south korea, sep 05-07, 2006 Yang GH (Yang Guohua); He GR (He Guorong); Zheng WH (Zheng Wanhua); Chen LH (Chen Lianghui) 收藏  |  浏览/下载：85/22  |  提交时间：2010/03/29 Defect influence on luminescence efficiency of GaN-based LEDs 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong) 收藏  |  浏览/下载：473/18  |  提交时间：2010/03/29 defects   Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 characterization  defects  X-ray diffraction  molecular beam epitaxy  nitrides  GAAS   Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Pan Z; Li LH; Zhang W; Wang XU; Lin YW; Wu RH 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 adsorption  characterization  radiation  molecular beam epitaxy  nitrides  SURFACE-EMITTING LASER  QUANTUM-WELLS  OPERATION  RANGE   Dynamics of formation of defects in annealed InP 会议论文 conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998 Han YJ; Liu XL; Jiao JH; Lin LY 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 defects formation  hydrogen related defects  semi-insulating  InP   High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD 会议论文 spie conference on optoelectronic materials and devices, taipei, taiwan, jul 09-11, 1998 Ma XY; Cao Q; Wang ST; Guo L; Lian P; Wang LM; Zhang XY; Yang YL; Zhang HQ; Wang GH; Chen LH 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 AlGaInP  quantum well  laser diode  MOCVD   Growth of Fe doped semi-insulating InP by LP-MOCVD 会议论文 conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998 Yan XJ; Zhu HL; Wang W; Xu GY; Zhou F; Ma CH; Wang XJ; Tian HL; Zhang JY; Wu RH; Wang QM 收藏  |  浏览/下载：19/0  |  提交时间：2010/10/29 semi-insulating  Fe-doped  MOCVD   Formation mechanism of defects in annealed InP 会议论文 spie conference on optoelectronic materials and devices, taipei, taiwan, jul 09-11, 1998 Han YJ; Liu XL; Jiao JH; Lin LY 收藏  |  浏览/下载：7/0  |  提交时间：2010/10/29 defects formation  hydrogen related defects  semi-insulating  InP