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科研机构
半导体研究所 [9]
内容类型
会议论文 [9]
发表日期
2009 [1]
2008 [4]
2007 [1]
2002 [1]
2000 [2]
学科主题
光电子学 [9]
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学科主题:光电子学
内容类型:会议论文
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Growth behavior of AlInGaN films
会议论文
4th asian conference on crystal growth and crystal technology, sendai, japan, may 21-24, 2008
Shang JZ
;
Zhang BP
;
Mao MH
;
Cai LE
;
Zhang JY
;
Fang ZL
;
Liu BL
;
Yu JZ
;
Wang QM
;
Kusakabe K
;
Ohkawa K
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/03/09
Scanning electron microscope
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:134/0
  |  
提交时间:2010/03/09
GaN
MOCVD
LED
nano-pattern
SEM
HRXRD
PL
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
GaN
nitrides
LED
MOCVD
patterned sapphire substrate
wet etching
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, JC
;
Wang, JX
;
Liu, NX
;
Liu, Z
;
Li, JM
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
AlGaN
GaN template
A1N interlayer
MOCVD
crack
interference fringes
Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P
会议论文
6th international conference on thin film physics and applications, shanghai, peoples r china, sep 25-28, 2007
Sun, MX
;
Tan, MQ
;
Zhao, M
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/09
antireflective coatings
superluminescent diodes
double source electron beam evaporation technology
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Sun, G (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Liu, X (Liu, Xingfang)
;
Zhao, Y (Zhao, Yongmei)
;
Li, J (Li, Jiaye)
;
Wang, L (Wang, Lei)
;
Zhao, W (Zhao, Wanshun)
;
Wang, L (Wang, Liang)
收藏
  |  
浏览/下载:87/29
  |  
提交时间:2010/03/29
polycrystalline 3C-SiC
resonator
doping
SILICON-CARBIDE
Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD
会议论文
10th international meeting on ferroelectricity (imf-10), madrid, spain, sep 03-07, 2001
Wang H
;
Shang SX
;
Yao WF
;
Hou Y
;
Xu XH
;
Wang D
;
Wang M
;
Yu JZ
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/15
Bi2Ti2O7
thin film
MOCVD
(111) orientation
CHEMICAL-VAPOR-DEPOSITION
CRYSTAL THIN-FILMS
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition
会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
作者:
Zhao DG
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2010/11/15
cubic GaN
buffer layer
atomic force microscopy
reflection high-energy electron diffraction
MOVPE
In situ annealing during the growth of relaxed SiGe
会议论文
conference on optical and infrared thin films, san diego, ca, 36739
Li DZ
;
Huang CJ
;
Cheng BW
;
Wang HJ
;
Yu Z
;
Zhang CH
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition
SiGe
Refractive High Energy Electron Diffraction
tansmission electron microscopy
Double Crystal X-Ray Diffraction
MOBILITY 2-DIMENSIONAL ELECTRON
CRITICAL THICKNESS
STRAINED LAYERS
GE
RELAXATION
EPILAYERS
SI1-XGEX
GESI/SI
GASES
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