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科研机构
半导体研究所 [12]
内容类型
会议论文 [12]
发表日期
2009 [1]
2008 [2]
2005 [1]
2001 [2]
2000 [1]
1998 [5]
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学科主题
光电子学 [12]
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学科主题:光电子学
内容类型:会议论文
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Si based quantum cascade structure: from energy band structures design to materials growth
会议论文
3rd sino-german symposium on silicon age - silicon for microelectronics, photonics and photovoltacis, hangzhou, peoples r china, jun 09-14, 2008
Yu, JZ
;
Han, GQ
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2010/03/09
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Wei, XC
;
Zhao, YW
;
Dong, ZY
;
Li, JM
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/03/09
zinc oxide
X-ray diffraction
defects
single crystal
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhao, YW
;
Zhang, F
;
Zhang, R
;
Dong, ZY
;
Wei, XC
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
zinc oxide
defect
vacancy
Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD
会议论文
symposium on group-4 semiconductor nanostructures held at the 2004 mrs fall meeting, boston, ma, nov 29-dec 02, 2004
Wang, XX
;
Zhang, JG
;
Wang, QM
收藏
  |  
浏览/下载:202/48
  |  
提交时间:2010/03/29
SILICON NANOWIRES
Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing
会议论文
asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001
作者:
Xu YQ
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
MU-M
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Pan Z
;
Li LH
;
Zhang W
;
Wang XU
;
Lin YW
;
Wu RH
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
adsorption
characterization
radiation
molecular beam epitaxy
nitrides
SURFACE-EMITTING LASER
QUANTUM-WELLS
OPERATION
RANGE
In situ annealing during the growth of relaxed SiGe
会议论文
conference on optical and infrared thin films, san diego, ca, 36739
Li DZ
;
Huang CJ
;
Cheng BW
;
Wang HJ
;
Yu Z
;
Zhang CH
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition
SiGe
Refractive High Energy Electron Diffraction
tansmission electron microscopy
Double Crystal X-Ray Diffraction
MOBILITY 2-DIMENSIONAL ELECTRON
CRITICAL THICKNESS
STRAINED LAYERS
GE
RELAXATION
EPILAYERS
SI1-XGEX
GESI/SI
GASES
Dynamics of formation of defects in annealed InP
会议论文
conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998
Han YJ
;
Liu XL
;
Jiao JH
;
Lin LY
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/10/29
defects formation
hydrogen related defects
semi-insulating
InP
Preparation and photoluminescence of nc-Si/SiO2 MQW
会议论文
conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998
Cheng BW
;
Yu JZ
;
Yu Z
;
Lei ZL
;
Li DZ
;
Wang QM
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/10/29
Photoluminescence measurements on erbium-doped silicon
会议论文
conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998
Lei HB
;
Yang QQ
;
Ou HY
;
Wang QM
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2010/10/29
erbium-doped silicon
photoluminescence
energy transfer
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