Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD

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	Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD
	Wang, XX ; Zhang, JG ; Wang, QM
	2005
会议名称	symposium on group-4 semiconductor nanostructures held at the 2004 mrs fall meeting
会议日期	nov 29-dec 02, 2004
会议地点	boston, ma
关键词	SILICON NANOWIRES
页码	832: 293-298
通讯作者	wang, xx, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	a new metal catalysis-free method of fabricating si or sio2 nanowires (nws) compatible with si cmos technology was proposed by annealing siox (x < 2) films deposited by plasma -enhanced chemical vapor deposition (pecvd). the effects of the si content (x value) and thickness of siox films, the annealing process and flowing gas ambient on the nw growth were studied in detail. the results indicated that the siox film of a thickness below 300 rim with x value close to 1 was most favorable for nw growth upon annealing at 1000-1150 degrees c in the flowing gas mixture of n-2 and h-2. nws of 50-100nm in diameter and tens of micrometers in length were synthesized by this method. the formation mechanism was likely to be related to a new type of oxide assisted growth (oag) mechanism, with si nanoclusters in siox films after phase separation serving as the nuclei for the growth of nws in siox films > 200nm, and sio molecules from thin sio, film decomposition inducing the nw growth in films < 100nm. an effective preliminary method to control nw growth direction was also demonstrated by etching trenches in siox films followed by annealing.
英文摘要	a new metal catalysis-free method of fabricating si or sio2 nanowires (nws) compatible with si cmos technology was proposed by annealing siox (x < 2) films deposited by plasma -enhanced chemical vapor deposition (pecvd). the effects of the si content (x value) and thickness of siox films, the annealing process and flowing gas ambient on the nw growth were studied in detail. the results indicated that the siox film of a thickness below 300 rim with x value close to 1 was most favorable for nw growth upon annealing at 1000-1150 degrees c in the flowing gas mixture of n-2 and h-2. nws of 50-100nm in diameter and tens of micrometers in length were synthesized by this method. the formation mechanism was likely to be related to a new type of oxide assisted growth (oag) mechanism, with si nanoclusters in siox films after phase separation serving as the nuclei for the growth of nws in siox films > 200nm, and sio molecules from thin sio, film decomposition inducing the nw growth in films < 100nm. an effective preliminary method to control nw growth direction was also demonstrated by etching trenches in siox films followed by annealing.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:35z (gmt). no. of bitstreams: 1 2443.pdf: 403841 bytes, checksum: 21d09f848ff19c282c0f2b032911defc (md5) previous issue date: 2005; mrs.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	mrs.
会议录	group-iv semiconductor nanostructures丛书标题: materials research society symposium proceedings
会议录出版者	materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa
会议录出版地	506 keystone drive, warrendale, pa 15088-7563 usa
学科主题	光电子学
语种	英语
ISSN号	0272-9172
ISBN号	1-55899-780-6
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10120]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang, XX,Zhang, JG,Wang, QM. Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD[C]. 见:symposium on group-4 semiconductor nanostructures held at the 2004 mrs fall meeting. boston, ma. nov 29-dec 02, 2004.