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宁波材料技术与工程研... [8]
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期刊论文 [18]
会议论文 [3]
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2019 [21]
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Resistive Switching Behavior in Ferroelectric Heterostructures
期刊论文
SMALL, 2019, 卷号: 15, 期号: 32, 页码: 13
作者:
Wang, Zhan Jie
;
Bai, Yu
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  |  
浏览/下载:24/0
  |  
提交时间:2021/02/02
conductivity
ferroelectric heterostructures
ferroelectricity
resistive switching
Resistive Switching Behavior in Ferroelectric Heterostructures
期刊论文
SMALL, 2019, 卷号: 15, 期号: 32, 页码: 13
作者:
Wang, Zhan Jie
;
Bai, Yu
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2021/02/02
conductivity
ferroelectric heterostructures
ferroelectricity
resistive switching
Power and Area Efficient FPGA Building Blocks Based on Ferroelectric FETs
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 期号: 5, 页码: 1780-1793
作者:
Chen, Xiaoming
;
Ni, Kai
;
Niemier, Michael T.
;
Han, Yinhe
;
Datta, Suman
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  |  
浏览/下载:61/0
  |  
提交时间:2019/08/16
Ferroelectric field-effect transistor (FeFET)
field-programmable gate array (FPGA)
lookup table (LUT)
routing switch
Operando diagnostic detection of interfacial oxygen "breathing' of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
期刊论文
MATERIALS RESEARCH LETTERS, 2019, 卷号: 7, 页码: 117-123
作者:
Niu, Gang
;
Calka, Pauline
;
Huang, Peng
;
Sharath, Sankaramangalam Ulhas
;
Petzold, Stefan
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  |  
浏览/下载:24/0
  |  
提交时间:2019/11/19
interface
HfO2
resistive switching
RRAM
HAXPES
Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory
期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114
作者:
Hang, Cheng-Zhou
;
Wang, Chen
;
Gao, Bin
;
Chen, Huan
;
Xu, Ming-Hong
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  |  
浏览/下载:16/0
  |  
提交时间:2019/12/02
Electric breakdown
Energy utilization
Hafnium compounds
Integrated circuit design
Intelligent systems
Monte Carlo methods
RRAM, Kinetic monte carlo simulation
Microscopic distribution
Neuromorphic computing
Resistive random access memory
Resistive random access memory (rram)
Resistive switching
Sub-nanosecond pulse
Thermal conductance, Switching
Chemical vapor deposition synthesis of sp(2)-BN film on 2-inch Si substrates for bipolar resistive random access memory device
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 卷号: 103
作者:
Liang, Hongwei
;
Abbas, Qasim
;
Chen, Yuanpeng
;
Shi, Jianjun
;
Xia, Xiaochuan
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  |  
浏览/下载:2/0
  |  
提交时间:2019/12/02
sp(2)-BN film
RRAM
Si
CVD
Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 4
作者:
Zhao, Xiaolong
;
Zhang, Xumeng
;
Shang, Dashan
;
Wu, Zuheng
;
Xiao, Xiangheng
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  |  
浏览/下载:31/0
  |  
提交时间:2019/12/05
RRAM
resistive switching
lithium silicate
oxygen reservoir electrode
dual ion material
Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO2-Based RRAM Array
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 8, 页码: 3337-3341
作者:
Zhang, Xinlei
;
Ji, Hao
;
Jiang, Ran
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  |  
浏览/下载:9/0
  |  
提交时间:2019/12/11
1R
crossbar array
hafnium oxide
memory
selector
self-rectifying
Impact of chemical doping on resistive switching behavior in Zirconium-doped CHNHPbI based RRAM
期刊论文
Organic Electronics, 2019
作者:
Yuli He
;
Guokun Ma
;
Xiaowen Zhou
;
Hengmei Cai
;
Chunlei Liu
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/17
resistive random-access memory
CH3NH3PbI3 perovskite
Zirconium doping
space-charge limited conduction
Schottky emission
A ZnO-based resistive device for RRAM application
会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:
Xie, Hongwei
;
Liu, Yantao
;
Qi, Yue
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  |  
浏览/下载:5/0
  |  
提交时间:2019/12/20
RRAM
conductive filament
zinc oxide
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