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	Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO2-Based RRAM Array
	Zhang, Xinlei; Ji, Hao; Jiang, Ran
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2019
卷号	66期号:8页码:3337-3341
关键词	1R crossbar array hafnium oxide memory selector self-rectifying
DOI	10.1109/TED.2019.2924038
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4546562
专题	山东大学
作者单位	Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, Xinlei,Ji, Hao,Jiang, Ran. Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO2-Based RRAM Array[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66(8):3337-3341.
APA	Zhang, Xinlei,Ji, Hao,&Jiang, Ran.(2019).Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO2-Based RRAM Array.IEEE TRANSACTIONS ON ELECTRON DEVICES,66(8),3337-3341.
MLA	Zhang, Xinlei,et al."Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO2-Based RRAM Array".IEEE TRANSACTIONS ON ELECTRON DEVICES 66.8(2019):3337-3341.

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