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	Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory
	Hang, Cheng-Zhou; Wang, Chen; Gao, Bin; Chen, Huan; Xu, Ming-Hong; Hao, Liang; Lu, Hong-Liang
刊名	APPLIED PHYSICS LETTERS
	2019
卷号	114
关键词	Electric breakdown Energy utilization Hafnium compounds Integrated circuit design Intelligent systems Monte Carlo methods RRAM, Kinetic monte carlo simulation Microscopic distribution Neuromorphic computing Resistive random access memory Resistive random access memory (rram) Resistive switching Sub-nanosecond pulse Thermal conductance, Switching
ISSN号	0003-6951
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3225145
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 2.Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China. 3.Dalian Univ Technol, Sch Energy & Power Engn, Key Lab Ocean Energy Utilizat & Energy Conservat, Minist Educ, Dalian 116024, Peoples R China. 4.Fudan Univ, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
推荐引用方式 GB/T 7714	Hang, Cheng-Zhou,Wang, Chen,Gao, Bin,et al. Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory[J]. APPLIED PHYSICS LETTERS,2019,114.
APA	Hang, Cheng-Zhou.,Wang, Chen.,Gao, Bin.,Chen, Huan.,Xu, Ming-Hong.,...&Lu, Hong-Liang.(2019).Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory.APPLIED PHYSICS LETTERS,114.
MLA	Hang, Cheng-Zhou,et al."Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory".APPLIED PHYSICS LETTERS 114(2019).

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