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浏览/检索结果: 共12条，第1-10条 帮助 限定条件 发表日期：2016    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Exploration of vertical scaling limit in carbon nanotube transistors 期刊论文 APPLIED PHYSICS LETTERS, 2016 Qiu, Chenguang; Zhang, Zhiyong; Yang, Yingjun; Xiao, Mengmeng; Ding, Li; Peng, Lian-Mao 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 FIELD-EFFECT TRANSISTORS  ATOMIC LAYER DEPOSITION  HIGH-KAPPA DIELECTRICS  GATE DIELECTRICS  HIGH-PERFORMANCE  GRAPHENE  FILMS  MOSFET  OXIDE   A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Hu, Yue; Wang, Hao; Du, Caixia; Ma, Miaomiao; Chan, Mansun; He, Jin; Wang, Gaofeng 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Breakdown voltage (BV)  lateral double-diffused MOS (LDMOS)  N-island (NIS)  partial silicon-on-insulator (PSOI)  step-doped drift (SDD) region  BURIED P LAYER  POWER LDMOS  IMPROVEMENT  DEVICES  TRENCH  FILM  TRANSISTOR   Too Noisy at the Nanoscale?-The Rise of Random Telegraph Noise (RTN) in Devices and Circuits 其他 2016-01-01 Wang, Runsheng; Guo, Shaofeng; Ren, Pengpeng; Luo, Mulong; Zou, Jibin; Hang, Ru 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Random telegraph noise (RTN)  MOSFET  VARIABILITY  RELIABILITY  MOSFETS  IMPACT   Fabrication and optimization of a high speed deep-trench super-junction MOSFET with improved EMI performance 其他 2016-01-01 Fei Wang; Min-Zhi Lin; Yuan-Lin Yuan; Lei Liu; Yuhua Cheng; Peng-Fei Wang 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 trench  junction  capacitance  drain  abrupt  smoothed  switching  inferior  depletion  breakdown  trench  junction  capacitance  drain  abrupt  smoothed  switching  inferior  depletion  breakdown   ESD Reliability Improvement of the 0.25-mu m 60-V Power nLDMOS with Discrete Embedded SCRs Separated by STI Structures 其他 2016-01-01 Chen, Shen-Li; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun; Chen, Hung-Wei 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Electrostatic discharge (ESD)  N-channel lateral-diffused MOSFET (nLDMOS)  Secondary breakdown current (I-t2)  Shallow-trench isolation (STI)  Silicon-controller rectifier (SCR)   AN EXPERIMENTAL AND ANALYTICAL METHOD TO OBSERVE THE POLYSILICON NANOWIRE MOSFET THRESHOLD VOLTAGE 其他 2016-01-01 Sheu, Gene; Yang, Shao-Ming; Aanand; Imam, Syed Sarwar; Jen, Fan Ming; Lu, Shao Wei 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 nanowire  undoped-polysilicon  native gate oxide  drain saturation current  back-gate  mean-free path  TRANSISTORS  TRANSPORT   ESD-reliability characterizations of a 45-V p-channel LDMOS-SCR with the discrete-cathode end 其他 2016-01-01 Chen, Shen-Li; Huang, Yu-Ting; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 ESD-Reliability Characterizations of a 45-V p-Channel LDMOS-SCR with the Discrete-Cathode End 其他 2016-01-01 Chen, Shen-Li; Huang, Yu-Ting; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 P-type laterally-diffused metal oxide semiconductor (pLDMOS)  Electrostatic Discharge (ESD)  Holding voltage (V-h)  Secondary breakdown current (I-t2)   Resistive-Gate Field-Effect Transistor Exhibiting Steep Subthreshold Slope of 5mV /dec and High I_(ON)/I_(OFF) Ratio 其他 2016-01-01 Qianqian Huang; Zongwei Wang; Yue Pan; Yangyuan Wang; Ru Huang 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 resistive  electrically  drain  steep  OFF  ON  Ratio  dec and High I  transistor  operated  resistive  electrically  drain  steep  OFF  ON  Ratio  dec and High I  transistor  operated   FSD Protection Design for the 45-V pLDMOS-SCR (p-n-p-Arranged) Devices with Source-Discrete Distributions 其他 2016-01-01 Chen, Shen-Li; Huang, Yu-Ting; Yen, Chih-Ying; Chen, Kuei-Jyun; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Electrostatic-discharge (ESD)  Holding voltage (V-h)  p-channel lateral-diffused MOSFET (pLDMOS)  Secondary breakdown-current (I-1/2)  Silicon controlled rectifier (SCR)  Trigger Voltage (V-t1)