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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2010    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Surface roughness scattering in two dimensional electron gas channel 期刊论文 Applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: 3 作者:  Liu, B.;  Lu, Y. W.;  Jin, G. R.;  Zhao, Y.;  Wang, X. L. 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 Measurement of gan/ge(001) heterojunction valence band offset by x-ray photoelectron spectroscopy 期刊论文 Chinese physics letters, 2010, 卷号: 27, 期号: 6, 页码: 4 作者:  Guo Yan;  Liu Xiang-Lin;  Song Hua-Ping;  Yang An-Li;  Zheng Gao-Lin 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Electrically controllable rkky interaction in semiconductor quantum wires 期刊论文 Physical review b, 2010, 卷号: 81, 期号: 11, 页码: 4 作者:  Zhu, Jia-Ji;  Chang, Kai;  Liu, Ren-Bao;  Lin, Hai-Qing 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Surface roughness scattering in two dimensional electron gas channel 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111 Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG 收藏  |  浏览/下载：48/5  |  提交时间：2011/07/05 MOLECULAR-BEAM EPITAXY  MOBILITY ALGAN/GAN HETEROSTRUCTURES  RAY PHOTOEMISSION SPECTROSCOPY  PERFORMANCE  ALN  MODFETS  INN   All-Optical Clock Recovery for 20 Gb/s Using an Amplified Feedback DFB Laser 期刊论文 journal of lightwave technology, 2010, 卷号: 28, 期号: 17, 页码: 2521-2525 Sun Y (Sun Yu); Pan JAQ (Pan Jiao Qing); Zhao LJA (Zhao Ling Juan); Chen WX (Chen Weixi); Wang W (Wang Wei); Wang L (Wang Li); Zhao XAF (Zhao Xiao Fan); Lou CY (Lou Cai Yun) 收藏  |  浏览/下载：39/0  |  提交时间：2010/11/14 All optical clock recovery  distributed feedback (DFB) lasers  injection locking  semiconductor lasers  quantum well intermixing (QWI)  optical signal processing  3R REGENERATION  DIODES   Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 6, 页码: art. no. 067302 Guo Y (Guo Yan); Liu XL (Liu Xiang-Lin); Song HP (Song Hua-Ping); Yang AL (Yang An-Li); Zheng GL (Zheng Gao-Lin); Wei HY (Wei Hong-Yuan); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：204/46  |  提交时间：2010/07/05 GE  GAAS  GROWTH   Electrically controllable RKKY interaction in semiconductor quantum wires 期刊论文 physical review b, 2010, 卷号: 81, 期号: 1, 页码: art. no. 113302 Zhu JJ (Zhu Jia-Ji); Chang K (Chang Kai); Liu RB (Liu Ren-Bao); Lin HQ (Lin Hai-Qing) 收藏  |  浏览/下载：64/0  |  提交时间：2010/04/28 MAGNETIC-FIELD  ELECTRON-GAS  EXCHANGE  SPINS  DOTS  MANIPULATION  COMPUTATION   Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers 期刊论文 ieee transactions on microwave theory and techniques, 2010, 卷号: 58, 期号: 5, 页码: 1283-1289 Zhu NH (Zhu Ning Hua); Xu GZ (Xu Gui Zhi); Hofmann W (Hofmann Werner); Chen W (Chen Wei); Bohm G (Boehm Gerhard); Liu; Y (Liu Yu); Wang X (Wang Xin); Xie L (Xie Liang); Amann MC (Amann Markus-Christian) 收藏  |  浏览/下载：120/1  |  提交时间：2010/06/04 Equivalent-circuit model  optical modulation  scattering parameters  semiconductor lasers  vertical-cavity surface-emitting lasers (VCSELs)   IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文 international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450 作者:  Hao GD 收藏  |  浏览/下载：49/5  |  提交时间：2011/07/05 Strain effect  optical anisotropy  A-plane  R-plane  CONTINUOUS-WAVE OPERATION  LIGHT-EMITTING-DIODES  LASER-DIODES  POLARIZATION ANISOTROPY  QUANTUM-WELLS  SEMICONDUCTORS   An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文 journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464 作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS 收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04 Nitride materials  Crystal growth  X-ray diffraction  TIME-RESOLVED PHOTOLUMINESCENCE  LIGHT-EMITTING-DIODES  PIEZOELECTRIC FIELDS  LASER-DIODES  DEPENDENCE  RECOMBINATION  POLARIZATION  DYNAMICS  GROWTH  MOCVD