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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 发表日期：2010    学科主题：半导体材料    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101 Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：221/51  |  提交时间：2010/05/24 excited states  gallium arsenide  III-V semiconductors  indium compounds  laser tuning  optical films  quantum dot lasers  silicon compounds  tantalum compounds  TEMPERATURE-DEPENDENCE  THRESHOLD  PERFORMANCE  GAIN   Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文 thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230 Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28 Gallium Arsenide  Gallium antimonide  Gallium antimonide/Aluminum antimonide  Superlattices  Molecular Beam Epitaxy  VAPOR-PHASE EPITAXY  SURFACE-MORPHOLOGY  GROWTH  SUPERLATTICES  TEMPERATURE  RELAXATION  DETECTORS  GAAS(001)  MOCVD  FILMS   Optical properties of Mn+ doped GaAs 期刊论文 optoelectronics and advanced materials-rapid communications, 2010, 卷号: 4, 期号: 6, 页码: 784-787 Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Liao SZ (Liao Shuzhi); Zhang FS (Zhang Fasheng); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：176/22  |  提交时间：2010/08/17 Photoluminescence  Ion implantation  Manganese  GaAs  ION-IMPLANTATION  SEMICONDUCTORS  CENTERS  DOTS   Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908 Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.) 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/14 OXYGEN  GATE  DIFFUSION  FILMS   Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO 期刊论文 acs applied materials & interfaces, 2010, 卷号: 2, 期号: 6, 页码: 1780-1784 Dong JJ (Dong J. J.); Zhang XW (Zhang X. W.); You JB (You J. B.); Cai PF (Cai P. F.); Yin ZG (Yin Z. G.); An Q (An Q.); Ma XB (Ma X. B.); Jin P (Jin P.); Wang ZG (Wang Z. G.); Chu PK (Chu Paul K.) 收藏  |  浏览/下载：152/22  |  提交时间：2010/07/05 hydrogen plasma treatment  zinc oxide  Raman spectroscopy  photoluminescence  RAMAN-SCATTERING  IMPLANTED ZNO  THIN-FILMS  DENSITY   Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 9, 页码: art. no. 094320 Tang AW (Tang Aiwei); Qu SC (Qu Shengchun); Hou YB (Hou Yanbing); Teng F (Teng Feng); Tan HR (Tan Hairen); Liu J (Liu Jie); Zhang XW (Zhang Xingwang); Wang YS (Wang Yongsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：29/0  |  提交时间：2010/12/12 THIN-FILM  OPTICAL-PROPERTIES  RAMAN-SCATTERING  MEMORY DEVICES  NANOPARTICLES  NANOCRYSTALS  MOLECULE  CLUSTERS   IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文 international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450 作者:  Hao GD 收藏  |  浏览/下载：49/5  |  提交时间：2011/07/05 Strain effect  optical anisotropy  A-plane  R-plane  CONTINUOUS-WAVE OPERATION  LIGHT-EMITTING-DIODES  LASER-DIODES  POLARIZATION ANISOTROPY  QUANTUM-WELLS  SEMICONDUCTORS   Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文 rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172 作者:  Wei TB;  Yang JK;  Duan RF 收藏  |  浏览/下载：58/10  |  提交时间：2011/07/05 GaN  HVPE  freestanding thick films  stress release  photoluminescence  VAPOR-PHASE EPITAXY  GROWTH  PRESSURE  HVPE   Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers 期刊论文 japanese journal of applied physics, 2010, 卷号: 49, 期号: 10, 页码: art. no. 100201 Wei TB (Wei Tongbo); Wang JX (Wang Junxi); Liu NX (Liu Naixin); Lu HX (Lu Hongxi); Zeng YP (Zeng Yiping); Wang GH (Wang Guohong); Li JM (Li Jinmin) 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/14 LOW-TEMPERATURE ACTIVATION  FILMS